Publications-conferences.bib

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@inproceedings{Blankrot2018automated,
  author = {Boaz Blankrot AND Clemens Heitzinger},
  title = {Automated Design of Photonic Crystal Demultiplexers},
  booktitle = {Proc. 12th International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials 2018)},
  address = {Espoo, Finland},
  key = {Metamaterials 2018},
  pages = {55-77},
  month = {27 August -- 1 September},
  year = 2018
}
@inproceedings{Blankrot2018optimization,
  author = {Boaz Blankrot AND Clemens Heitzinger},
  title = {Optimization centric approach for electromagnetic scattering from metamaterials},
  booktitle = {Proc. 2018 SIAM Annual Meeting (AN18)},
  address = {Portland, OR, USA},
  key = {SIAM AN 2018},
  pages = {62},
  month = {9--13 July},
  year = 2018
}
@inproceedings{Heitzinger2018Bayesian,
  author = {Clemens Heitzinger AND Jose Morales Escalante AND Benjamin Stadlbauer AND Leila Taghizadeh},
  title = {{Bayesian} estimation and machine learning: current problems and challenges with examples in electrical impedance tomography and nanosensors},
  booktitle = {Proc. Workshop on Research Challenges and Opportunities at the interface of Machine Learning and Uncertainty Quantification},
  address = {University of Southern California, Los Angeles, CA, USA},
  pages = {online},
  month = {4--6 June},
  year = 2018,
  note = {\textit{Accepted for publication}}
}
@inproceedings{Pammer2018utilizing,
  author = {Gudmund Pammer AND Stefan Rigger AND Clemens Heitzinger},
  title = {Utilizing multisymmetry properties in uncertainty quantification},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
  address = {Garden Grove, CA, USA},
  key = {SIAM UQ 2018},
  pages = {23-24},
  month = {16--19 April},
  year = 2018
}
@inproceedings{Stadlbauer2018Bayesian,
  author = {Benjamin Stadlbauer AND Leila Taghizadeh AND Jose Morales Escalante Clemens Heitzinger AND Andrea Cossettini AND Luca Selmi},
  title = {{Bayesian} estimation for transport equations for nanocapacitors},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
  address = {Garden Grove, CA, USA},
  key = {SIAM UQ 2018},
  pages = {69-70},
  month = {16--19 April},
  year = 2018
}
@inproceedings{Cossettini2018calibration,
  author = {Andrea Cossettini AND Paolo Scarbolo AND Jose Morales Escalante AND Benjamin Stadlbauer AND Naseer Muhammad AND Leila Taghizadeh AND Clemens Heitzinger AND Luca Selmi},
  title = {Calibration, compensation, parameter estimation, and uncertainty quantification for nanoelectrode array biosensors},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
  address = {Garden Grove, CA, USA},
  key = {SIAM UQ 2018},
  pages = {81},
  month = {16--19 April},
  year = 2018
}
@inproceedings{Khodadadian2018multi-level,
  author = {Amirreza Khodadadian AND Maryam Parvizi AND Clemens Heitzinger},
  title = {Optimal multi-level {Monte Carlo} and adaptive grid refinement for the stochastic drift-diffusion-{Poisson} System},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
  address = {Garden Grove, CA, USA},
  key = {SIAM UQ 2018},
  pages = {81-82},
  month = {16--19 April},
  year = 2018
}
@inproceedings{Morales2018uncertainty,
  author = {Jose Morales Estimation AND Clemens Heitzinger},
  title = {Uncertainty quantification for the {Boltzmann-Poisson} system},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
  address = {Garden Grove, CA, USA},
  key = {SIAM UQ 2018},
  pages = {93},
  month = {16--19 April},
  year = 2018
}
@inproceedings{Taghizadeh2018Bayesian,
  author = {Leila Taghizadeh AND Jose Morales Escalante AND Benjamin Stadlbauer AND Clemens Heitzinger},
  title = {{Bayesian} estimation for a tomography problem},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
  address = {Garden Grove, CA, USA},
  key = {SIAM UQ 2018},
  pages = {138},
  month = {16--19 April},
  year = 2018
}
@inproceedings{Taghizadeh2017stochastic,
  author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
  title = {The stochastic drift-diffusion-{Poisson} system for modeling nanowire and nanopore sensors},
  editor = {P. Quintela AND others},
  booktitle = {Progress in Industrial Mathematics at ECMI 2016},
  pages = {309-317},
  year = 2017,
  volume = 26,
  organization = {Mathematics in Industry},
  publisher = {Springer},
  doi = {10.1007/978-3-319-63082-3_48},
  abstract = {We use the stochastic drift-diffusion-Poisson system to
                  model charge transport in nanoscale devices. This
                  stochastic transport equation makes it possible to
                  describe device variability, noise, and
                  fluctuations. We present---as theoretical
                  results---an existence and local uniqueness theorem
                  for the weak solution of the stochastic
                  drift-diffusion-Poisson system based on a
                  fixed-point argument in appropriate function
                  spaces. We also show how to quantify random-dopant
                  effects in this formulation. Additionally, we have
                  developed an optimal multi-level Monte-Carlo method
                  for the approximation of the solution. The method is
                  optimal in the sense that the computational work is
                  minimal for a given error tolerance.}
}
@inproceedings{Taghizadeh2017Bath,
  author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
  title = {Optimal multi-level randomized-quasi-{Monte-Carlo} methods for the stochastic drift-diffusion-{Poisson} system and for stochastic homogenization},
  booktitle = {Proc. International Conference on Scientific Computation and Differential Equations 2017 (SciCADE 2017)},
  address = {Bath, UK},
  key = {SciCADE 2017},
  pages = {129},
  month = {11--15 Sep 2017},
  year = 2017
}
@inproceedings{Taghizadeh2017USNCCM,
  author = {Leila Taghizadeh AND Amirreza Khodadadian AND Stefan Rigger AND Clemens Heitzinger},
  title = {Optimal multi-level {Monte-Carlo} methods for the stochastic drift-diffusion-{Poisson} system and for stochastic homogenization},
  booktitle = {Proc. 14th US National Congress on Computational Mechanics (USNCCM)},
  address = {Montreal, Canada},
  key = {USNCCM 2017},
  pages = {321},
  month = {17--20 July 2017},
  year = 2017
}
@inproceedings{Khodadadian2017USNCCM,
  author = {Amirreza Khodadadian AND Clemens Heitzinger AND Kiarash Hosseini AND Reza Kalantarinejad AND Marjan Hedayati AND Ali Manzour-ol-Ajdad},
  title = {Optimal sensitivity of nanowire field-effect troponin sensors},
  booktitle = {Proc. 14th US National Congress on Computational Mechanics (USNCCM)},
  address = {Montreal, Canada},
  key = {USNCCM 2017},
  pages = {407},
  month = {17--20 July 2017},
  year = 2017,
  note = {\textit{Accepted for publication}}
}
@inproceedings{Blankrot2017Salzburg,
  author = {Boaz Blankrot AND Clemens Heitzinger},
  title = {Multiple scattering approach for dielectric metamaterial analysis},
  booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
  address = {Salzburg, Austria},
  key = {ANADAY 2017},
  pages = {17},
  month = {4--5 May},
  year = 2017
}
@inproceedings{Khodadadian2017Salzburg,
  author = {Amirreza Khodadadian AND Leila Taghizadeh AND Clemens Heitzinger},
  title = {Optimal multi-level {Monte Carlo} method for the stochastic drift-diffusion-Poisson system},
  booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
  address = {Salzburg, Austria},
  key = {ANADAY 2017},
  pages = {16},
  month = {4--5 May},
  year = 2017
}
@inproceedings{Pammer2017Salzburg,
  author = {Gudmund Pammer AND Stefan Rigger AND Clemens Heitzinger},
  title = {Computing cubature formulas for multisymmetric functions and applications to stochastic partial differential equations},
  booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
  address = {Salzburg, Austria},
  key = {ANADAY 2017},
  pages = {15},
  month = {4--5 May},
  year = 2017
}
@inproceedings{Rigger2017Salzburg,
  author = {Stefan Rigger AND Gudmund Pammer AND Clemens Heitzinger},
  title = {Approximation of multisymmetric functions},
  booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
  address = {Salzburg, Austria},
  key = {ANADAY 2017},
  pages = {14},
  month = {4--5 May},
  year = 2017
}
@inproceedings{Mitscha-Baude2017Salzburg,
  author = {Gregor Mitscha-Baude AND Benjamin Stadlbauer AND Clemens Heitzinger},
  title = {Simulation of nanopores with the {Poisson-Nernst-Planck-Stokes} and {Fokker-Planck} equations and adaptive finite elements},
  booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
  address = {Salzburg, Austria},
  key = {ANADAY 2017},
  pages = {13},
  month = {4--5 May},
  year = 2017
}
@inproceedings{Stadlbauer2017Salzburg,
  author = {Benjamin Stadlbauer AND Gregor Mitscha-Baude AND Clemens Heitzinger},
  title = {Brownian-dynamics simulations of nanopore protein sensing},
  booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
  address = {Salzburg, Austria},
  key = {ANADAY 2017},
  pages = {12},
  month = {4--5 May},
  year = 2017
}
@inproceedings{Blankrot2017integral,
  author = {Boaz Blankrot AND Clemens Heitzinger},
  title = {Integral equation solver for metamaterial design},
  booktitle = {Proc. SIAM Conference on Computational Science and Engineering (CSE 2017},
  address = {Atlanta, GA, USA},
  key = {SIAM CSE 2017},
  pages = {149},
  month = {27 February -- 3~March},
  year = 2017
}
@inproceedings{Heitzinger2017optimal,
  author = {Clemens Heitzinger AND Amirreza Khodadadian AND Gudmund Pammer AND Stefan Rigger AND Leila Taghizadeh},
  title = {Optimal numerical methods for stochastic {PDEs}},
  booktitle = {Proc. SIAM Conference on Computational Science and Engineering (CSE 2017},
  address = {Atlanta, GA, USA},
  key = {SIAM CSE 2017},
  pages = {129},
  month = {27 February -- 3~March},
  year = 2017
}
@inproceedings{Heitzinger2016Julia,
  author = {Clemens Heitzinger},
  title = {Julia and partial differential equations: being faster than {M*TL*B}},
  booktitle = {Proc. JuliaCon 2016},
  address = {Boston, MA, USA},
  key = {JuliaCon 2016},
  pages = {\url{http://juliacon.org/abstracts.html#PDEs}},
  month = {21--25 June},
  year = 2016
}
@inproceedings{Heitzinger2016stochastic,
  author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
  title = {The stochastic drift-diffusion-{Poisson} system for modeling nanowire and nanopore sensors},
  booktitle = {Proc. 19th European Conference on Mathematics for Industry (ECMI 2016)},
  address = {Santiago de Compostela, Spain},
  key = {ECMI 2016},
  series = {Mathematics in Industry},
  publisher = {Springer},
  pages = {86},
  month = {13--17 June},
  year = 2016
}
@inproceedings{Heitzinger2016optimal,
  author = {Clemens Heitzinger AND Caroline Geiersbach AND Leila Taghizadeh},
  title = {Optimal numerical approaches to the stochastic homogenization of elliptic equations and to the stochastic drift-diffusion-{Poisson} system},
  booktitle = {Proc. SIAM Conference on Mathematical Aspects of Materials Science (MS16)},
  address = {Philadelpha, PA, USA},
  key = {SIAM MS 2016},
  pages = 136,
  month = {8--12 May},
  year = 2016
}
@inproceedings{Stadlbauer2016modeling,
  author = {Benjamin Stadlbauer AND Andreas Buttinger-Kreuzhuber AND Gregor Mitscha-Eibl AND Clemens Heitzinger},
  title = {Modeling the expected time to reach the recognition element in nanopore {DNA} sequencing},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
  address = {Lausanne, Switzerland},
  key = {SIAM UQ 2016},
  pages = 4,
  month = {5--8 April},
  year = 2016
}
@inproceedings{Geiersbach2016Lausanne,
  author = {Caroline Geiersbach AND Gerhard Tulzer AND Clemens Heitzinger},
  title = {Optimal approach for the calculation of stochastically homogenized coefficients of elliptic {PDEs}},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
  address = {Lausanne, Switzerland},
  key = {SIAM UQ 2016},
  pages = 124,
  month = {5--8 April},
  year = 2016
}
@inproceedings{Pammer2016non-intrusive,
  author = {Gudmund Pammer AND Clemens Heitzinger},
  title = {Non-intrusive stochastic {Galerkin} method for the stochastic nonlinear {Poisson-Boltzmann} equation},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
  address = {Lausanne, Switzerland},
  key = {SIAM UQ 2016},
  pages = 9,
  month = {5--8 April},
  year = 2016
}
@inproceedings{Taghizadeh2016optimal,
  author = {Leila Taghizadeh AND Clemens Heitzinger},
  title = {Optimal method for calculating solutions of the stochastic drift-diffusion-{Poisson} system},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
  address = {Lausanne, Switzerland},
  key = {SIAM UQ 2016},
  pages = 9,
  month = {5--8 April},
  year = 2016
}
@inproceedings{Taghizadeh2016stochastic,
  author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
  title = {Stochastic modeling of dopant atoms in nanoscale transistors using multi-level {Monte Carlo}},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
  address = {Lausanne, Switzerland},
  key = {SIAM UQ 2016},
  pages = 9,
  month = {5--8 April},
  year = 2016
}
@inproceedings{Taghizadeh2015optimal,
  author = {Leila Taghizadeh AND Amirreza Khodadadian AND Caroline Geiersbach AND Clemens Heitzinger},
  title = {Optimal multi-level {Monte-Carlo} method for a system of stochastic {PDEs}},
  booktitle = {Proc. SIAM Conference on the Analysis of Partial Differential Equations (SIAM PD15)},
  address = {Scottsdale, AZ, USA},
  key = {SIAM PD 2015},
  pages = {76-77},
  month = {7--10 December},
  year = 2015
}
@inproceedings{Taghizadeh2015approach,
  author = {Leila Taghizadeh AND Caroline Geiersbach AND Clemens Heitzinger},
  title = {Optimal approach for the numerical stochastic homogenization of elliptic problems},
  booktitle = {Proc. SIAM Conference on Analysis of Partial Differential Equations (SIAM PD15)},
  address = {Scottsdale, AZ, USA},
  key = {SIAM PD 2015},
  pages = {101-102},
  month = {7--10 December},
  year = 2015
}
@inproceedings{Heitzinger2015Taormina,
  author = {Clemens Heitzinger AND Leila Taghizadeh},
  title = {The stochastic drift-diffusion-{Poisson} system for modeling nanoscale devices and a multi-level {Monte-Carlo} method},
  booktitle = {Proc. 24th International Conference on Transport Theory (ICTT 2015)},
  address = {Taormina, Italy},
  key = {ICTT 2015},
  pages = {115-116},
  month = {7--11 September},
  year = 2015
}
@inproceedings{Taghizadeh2015Taormina,
  author = {Clemens Heitzinger AND Leila Taghizadeh},
  title = {Existence and uniqueness for the {Stokes}-{Nernst}-{Planck}-drift-diffusion-{Poisson} system for modeling nanowire sensors and nanopores},
  booktitle = {Proc. 24th International Conference on Transport Theory (ICTT 2015)},
  address = {Taormina, Italy},
  key = {ICTT 2015},
  pages = {117-118},
  month = {7--11 September},
  year = 2015
}
@inproceedings{Heitzinger2015Oxford,
  author = {Clemens Heitzinger},
  title = {Advances in numerical methods for stochastic partial differential equations and stochastic homogenization},
  booktitle = {Proc. New Directions in Numerical Computation: In Celebration of Nick Trefethen's 60th Birthday},
  address = {Oxford, UK},
  key = {LNT60},
  pages = {24--25},
  month = {25--28 August},
  year = 2015
}
@inproceedings{Khodadadian2015SanDiego,
  author = {Amirreza Khodadadian AND Clemens Heitzinger},
  title = {The signal-to-noise ratio due to biological noise in field-effect sensors calculated using the stochastic {Poisson} equation and polynomial-chaos expansion},
  booktitle = {Proc. 13th US National Congress on Computational Mechanics (USNCCM)},
  address = {San Diego, CA},
  key = {USNCCM 2015},
  pages = {501},
  month = {26--30 July},
  year = 2015
}
@inproceedings{Mitscha-Eibl2015SanDiego,
  author = {Gregor Mitscha-Eibl AND Andreas Buttinger-Kreuzhuber AND Gerhard Tulzer AND Clemens Heitzinger},
  title = {Nonlinear coupling of the drift-diffusion-{Poisson} and {Stokes} systems for nanopore simulations},
  booktitle = {Proc. 13th US National Congress on Computational Mechanics},
  address = {San Diego, CA},
  key = {USNCCM 2015},
  pages = {707},
  month = {26--30 July},
  year = 2015
}
@inproceedings{Khodadadian2015Cachan,
  author = {Amirreza Khodadadian AND Clemens Heitzinger},
  title = {Ionic currents through transmembrane proteins calculated by a transport equation for confined structures},
  booktitle = {Proc. 4th International Conference on Computational and Mathematical Biomedical Engineering (CMBE 2015)},
  address = {Cachan, France},
  key = {CMBE 2015},
  pages = {460-463},
  month = {29~June -- 1~July},
  year = 2015
}
@inproceedings{Tulzer2015noise,
  author = {Gerhard Tulzer AND Clemens Heitzinger},
  title = {Noise and Fluctuations in Nanowire Biosensors},
  booktitle = {Proc. 8th Vienna International Conference on Mathematical Modelling (MATHMOD 2015)},
  address = {Vienna, Austria},
  key = {MATHMOD 2015},
  pages = {761-765},
  month = {18--20 February},
  year = 2015,
  pdf = {Papers/Tulzer2015noise.pdf}
}
@inproceedings{Heitzinger2014Julia,
  author = {Clemens Heitzinger AND Gerhard Tulzer},
  title = {{Julia} and the numerical homogenization of {PDEs}},
  booktitle = {Proceedings of the First Workshop for High Performance Technical Computing in Dynamic Languages (HPTCDL 2014)},
  address = {New Orleans, LA},
  key = {HPTCDL 2014},
  pages = {36-40},
  month = {17 November},
  year = 2014,
  publisher = {IEEE Press},
  isbn = {978-1-4799-7020-9},
  url = {http://dx.doi.org/10.1109/HPTCDL.2014.8},
  doi = {10.1109/HPTCDL.2014.8}
}
@inproceedings{Khodadadian2014Barcelona,
  author = {Amirreza Khodadadian AND Clemens Heitzinger},
  title = {Using the stochastic {Poisson}-{Boltzmann} equation to quantify noise in nanowire bio- and gas sensors},
  booktitle = {Proc. 11th World Congress on Computational Mechanics (WCCM XI)},
  address = {Barcelona, Spain},
  key = {WCCM XI},
  pages = {A4187/1--2},
  month = {20--25 July},
  year = 2014
}
@inproceedings{Heitzinger2014transport,
  author = {Clemens Heitzinger AND Christian Ringhofer},
  title = {Transport in confined structures as a multiscale problem and numerical results for nanopores},
  booktitle = {Proc. SIAM Annual Meeting 2014},
  address = {Chicago, IL, USA},
  key = {SIAM AN14},
  pages = 6,
  month = {7--11 July},
  year = 2014
}
@inproceedings{Tulzer2014various,
  author = {Clemens Heitzinger AND Gerhard Tulzer},
  title = {Various strategies for the numerical stochastic homogenization of the stochastic {Poisson} and {Helmholtz} equations},
  booktitle = {Proc. SIAM Annual Meeting 2014},
  address = {Chicago, IL, USA},
  key = {SIAM AN14},
  pages = 15,
  month = {7--11 July},
  year = 2014
}
@inproceedings{Heitzinger2014OWR,
  author = {Clemens Heitzinger},
  title = {Transport through confined structures as a multiscale problem},
  booktitle = {Oberwolfach Reports},
  series = {volume~11},
  number = 2,
  pages = {1650-1653},
  year = 2014,
  doi = {10.4171/OWR/2014/30}
}
@inproceedings{Heitzinger2014stochastic,
  author = {Clemens Heitzinger},
  title = {The stochastic {Poisson} and {Poisson}-{Boltzmann} equations applied to quantifying noise and fluctuations in nanoscale sensors},
  booktitle = {Proc. 18th European Conference on Mathematics for Industry (ECMI 2014)},
  address = {Taormina, Italy},
  key = {ECMI 2014},
  pages = {150-151},
  month = {9--13 June},
  year = 2014
}
@inproceedings{Tulzer2014Monte-Carlo,
  author = {Gerhard Tulzer AND Clemens Heitzinger},
  title = {{Monte}-{Carlo} and Quasi-{Monte}-{Carlo} approaches for the numerical stochastic homogenization of elliptic partial differential equations},
  booktitle = {Proc. 11th International Conference on Monte Carlo and Quasi-Monte Carlo Methods in Scientific Computing (MCQMC2014)},
  address = {Leuven, Belgium},
  key = {MCQMC 2014},
  pages = {168},
  month = {6--11 April},
  year = 2014
}
@inproceedings{Khodadadian2014quasi-Monte-Carlo,
  author = {Amirreza Khodadadian AND Clemens Heitzinger},
  title = {Quasi-{Monte}-{Carlo} methods for the linear and nonlinear stochastic {Poisson}-{Boltzmann} equations},
  booktitle = {Proc. 11th International Conference on Monte Carlo and Quasi-Monte Carlo Methods in Scientific Computing (MCQMC2014)},
  address = {Leuven, Belgium},
  key = {MCQMC 2014},
  pages = {167},
  month = {6--11 April},
  year = 2014
}
@inproceedings{Heitzinger2014uncertainty,
  author = {Clemens Heitzinger AND Amirreza Khodadadian},
  title = {Uncertainty quantification in nanowire sensors using the stochastic nonlinear {Poisson}-{Boltzmann} equation},
  booktitle = {Proc. SIAM Conference on Uncertainty Quantification (SIAM UQ14)},
  address = {Savannah, Georgia, USA},
  key = {SIAM UQ14},
  pages = {87},
  month = {31 March -- 3~April},
  year = 2014
}
@inproceedings{Tulzer2013noise-level,
  author = {Gerhard Tulzer AND Stephan Steinhauer AND Elise Brunet AND Giorgio Mutinati AND Anton Köck AND Clemens Heitzinger},
  title = {Noise-Level Analysis of Metal-Oxide Nanowire Gas-Sensor Signals for Selective Gas Detection},
  booktitle = {Proc. International Conference on One-Dimensional Nanomaterials (ICON 2013)},
  key = {ICON 2013},
  pages = 161,
  address = {Annecy, France},
  month = {23--26 September},
  year = 2013
}
@inproceedings{Khodadadian2013simulation,
  author = {Amirreza Khodadadian AND Clemens Heitzinger},
  title = {Simulation of Nanowire Sensors using the Stochastic {Poisson}-{Boltzmann} Equation},
  booktitle = {Proc. 2nd International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE 2013)},
  pages = {19-20},
  address = {Prague, Czech Republic},
  key = {IC-MSQUARE 2013},
  month = {1--5 September},
  year = 2013
}
@inproceedings{Heitzinger2013OWR,
  author = {Clemens Heitzinger},
  title = {Deterministic and stochastic homogenization problems with new applications in nanotechnology},
  booktitle = {Oberwolfach Reports},
  series = {volume~10},
  number = 1,
  pages = {823-826},
  year = 2013,
  doi = {10.4171/OWR/2013/14}
}
@inproceedings{Tulzer2013Biodevices,
  author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
  title = {Modeling {$H_2$} Adsorption Processes at {SnO$_2$} Nanowire Surfaces: Parameter Estimation and Simulation},
  booktitle = {Proc. 6th International Conference on Biomedical Electronics and Devices (BIODEVICES 2013)},
  pages = {265-268},
  address = {Barcelona, Spain},
  key = {BIODEVICES 2013},
  month = {11--14 February},
  year = 2013,
  pdf = {Papers/Tulzer2013modeling.pdf}
}
@inproceedings{Tulzer2012SIWAN,
  author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
  title = {Characteristics of {CO} and {H$_2$} detection with single nanowire gas sensors},
  booktitle = {Proc. 5th Szeged International Workshop on Advances in Nanoscience 2012 (SIWAN 2012)},
  pages = {36-37},
  address = {Szeged, Hungary},
  key = {SIWAN2012},
  month = {24--27 October},
  year = 2012
}
@inproceedings{Tulzer2012Eurosensors,
  author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio C. Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
  title = {Inverse modeling of {CO} reactions at {SnO$_2$} nanowire surfaces for selective detection},
  booktitle = {Proc. Eurosensors {XXVI} 2012},
  address = {Krakow, Poland},
  key = {Eurosensors 2012},
  pages = {W2C-4/1--4},
  month = {9--12 September},
  year = 2012,
  note = {(Most prestigious European sensors conference.)}
}
@inproceedings{Baumgartner2012CMAM,
  author = {Stefan Baumgartner AND Clemens Heitzinger},
  title = {Modeling and Simulation of Nanowire Field-Effect Transistors},
  booktitle = {Proc. Computational Methods in Applied Mathematics (CMAM 2012)},
  address = {Berlin, Germany},
  key = {CMAM 2012},
  pages = {12-13},
  month = {30 July -- 3~August},
  year = 2012
}
@inproceedings{Tulzer2012CMAM,
  author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
  title = {Inverse modeling of {CO} adsorption processes at semiconductor nanowire surfaces for selective gas detection},
  booktitle = {Proc. Computational Methods in Applied Mathematics (CMAM 2012)},
  address = {Berlin, Germany},
  key = {CMAM 2012},
  pages = {54-55},
  month = {30 July -- 3~August},
  year = 2012
}
@inproceedings{Tulzer2012calculation,
  author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio C. Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
  title = {Calculation of gas surface-reaction parameters at {SnO$_2$} nanowire surfaces},
  booktitle = {Proc. 9th International Conference on Nanosciences and Nanotechnologies (NN12)},
  address = {Thessaloniki, Greece},
  key = {NN12},
  pages = 59,
  month = {3--6 July},
  year = 2012
}
@inproceedings{Baumgartner2012parallel,
  author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
  title = {Parallel simulation of nanowire field-effect transistors},
  booktitle = {Proc. 15th International Workshop on Computational Electronics (IWCE 15)},
  address = {Madison, WI},
  key = {IWCE 15},
  pages = {245-246},
  month = may,
  year = 2012
}
@inproceedings{Brunet2012fabrication,
  author = {Elise Brunet AND Gerhard Tulzer AND Stephan Steinhauer AND Giorgio Mutinati AND Anton Köck AND Martin Vasicek AND Clemens Heitzinger},
  title = {Fabrication and simulation of {SnO$_2$} nanowire gas sensors},
  booktitle = {Proc. 3rd International Congress on Nanotechnology in Medicine and Biology (BioNanoMed 2012)},
  address = {Krems, Austria},
  key = {BioNanoMed 2012},
  month = mar,
  year = 2012,
  pages = {8}
}
@inproceedings{Baumgartner2012self-consistent,
  author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
  title = {Self-consistent simulation of nanowire field-effect biosensors},
  booktitle = {Proc. 3rd International Congress on Nanotechnology in Medicine and Biology (BioNanoMed 2012)},
  address = {Krems, Austria},
  key = {BioNanoMed 2012},
  month = mar,
  year = 2012,
  pages = {C6}
}
@inproceedings{Baumgartner2012advanced,
  author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
  title = {Advanced Modeling and Simulation of Nanowire Field-Effect Sensors},
  booktitle = {Proc. 7th Vienna International Conference on Mathematical Modelling (MATHMOD 2012)},
  address = {Vienna, Austria},
  key = {MATHMOD 2012},
  pages = {240-245},
  month = feb,
  year = 2012,
  url = {http://www.ifac-papersonline.net/Detailed/58599.html},
  doi = {10.3182/20120215-3-AT-3016.00042},
  pdf = {Papers/baumgartner2012advanced.pdf},
  abstract = {A 3d simulator for nanowire field-effect sensors and
                  transistors including fast varying charge
                  concentrations at an interface is presented. This
                  simulator is based on a system of partial
                  differential equations calculating the electrostatic
                  potential of the whole device and the charge
                  concentrations in the semiconducting
                  nanowire. Therefore, three domains need to be
                  modeled. The nanowire is described by the
                  drift-diffusion-Poisson system, the
                  Poisson-Boltzmann equation is used for the
                  simulation of an aqueous solution, and the Poisson
                  equation holds in the remaining oxide. Such devices
                  can be used as gas sensors, and by functionalization
                  of the nanowire surface, i.e., by attaching probe
                  molecules, they can also be used for the detection
                  of biomolecules in aqueous solutions. Binding of
                  target molecules to the surface induces a field
                  effect due to changes of charges in a small layer
                  around the surface. This effect is responsible for
                  the sensor response and hence is of paramount
                  importance. A homogenization method resulting in two
                  jump conditions is implemented which splits the
                  computation into the charge of the boundary layer
                  and into the remaining device. In order to take into
                  account the geometry of the devices, 3d simulations
                  are necessary and hence a parallelization technique
                  has been developed. To include the jump conditions
                  of the homogenization method, a novel finite-element
                  tearing and interconnecting (FETI) method has been
                  developed. With this simulator it is possible to
                  solve the three dimensional and heterogeneous system
                  of partial differential equations with
                  discontinuities in feasible time using realizable
                  computer power. As a result, sensitivity in terms of
                  geometrical and physical properties can be predicted
                  and sensors can be improved.}
}
@inproceedings{Baumgartner2011eurosensors,
  author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
  title = {Analysis of Field-Effect Biosensors Using Self-Consistent {3D} Drift-Diffusion and {Monte-Carlo} Simulations},
  booktitle = {Proc. Eurosensors {XXV} 2011},
  address = {Athens, Greece},
  key = {Eurosensors 2011},
  pages = {1275/1-4},
  month = sep,
  year = 2011,
  pdf = {Papers/Poster - Eurosensors 2011.pdf},
  note = {(Most prestigious European sensors conference.)}
}
@inproceedings{Baumgartner2011design,
  author = {Stefan Baumgartner AND Martin Vasicek AND Alena Bulyha AND Nathalie Tassotti AND Clemens Heitzinger},
  title = {Design Investigations of Nanowire Field-Effect Biosensors using Self-Consistent 3D Drift-Diffusion and {Monte-Carlo} Simulations},
  booktitle = {Proc. 8th International Conference on Nanosciences and Nanotechnologies (NN11)},
  address = {Thessaloniki, Greece},
  key = {NN11},
  pages = 88,
  month = jul,
  year = 2011,
  pdf = {Papers/baumgartner2011design.pdf}
}
@inproceedings{Windbacher2010biotin,
  author = {Thomas Windbacher AND Viktor Sverdlov AND Siegfried Selberherr AND Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer},
  title = {Simulation of Field-Effect Biosensors ({BioFETs}) for Biotin-Streptavidin Complexes},
  booktitle = {AIP Conf. Proc. (Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors)},
  volume = 1199,
  pages = {507-508},
  month = jan,
  year = 2010,
  isbn = {},
  publisher = {AIP},
  url = {http://link.aip.org/link/?APCPCS/1199/507/1},
  pdf = {http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS001199000001000507000001&idtype=cvips&prog=search},
  doi = {10.1063/1.3295530},
  abstract = {Biologically sensitive field-effect transistors (BioFETs)
                  are a promising technology for detecting pathogens,
                  antigen-antibody complexes, and tumor markers.  A
                  BioFET is studied for a biotin-streptavidin
                  complex. Biotin-streptavidin is used in detection
                  and purification of various biomolecules. The link
                  between the Angstrom scale of the chemical reaction
                  and the micrometer scale of the field effect device
                  is realized by homogenized interface conditions.}
}
@inproceedings{Heitzinger2009modeling,
  author = {Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer AND Yang Liu AND Robert W. Dutton},
  title = {Modeling and Simulation of Orientation-Dependent Fluctuations in Nanowire Field-Effect Biosensors Using the Stochastic Linearized {Poisson}--{Boltzmann} Equation},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2009)},
  address = {San Diego, CA, USA},
  key = {SISPAD 2009},
  pages = {86-90},
  year = 2009,
  month = sep,
  isbn = {978-1-4244-3947-8},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=5290244&isnumber=5290184&punumber=5290183&k2dockey=5290244@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Eau+%29&pos=7&access=no},
  pdf = {http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5290244&isnumber=5290184},
  doi = {10.1109/SISPAD.2009.5290244},
  abstract = {We use the stochastic linearized Poisson-Boltzmann equation
                  to model the fluctuations in nanowire field-effect
                  biosensors due to changes in the orientation of the
                  biomolecules.  Different orientations of the
                  biomolecules with respect to the sensor surface due
                  to Brownian motion have different probabilities.
                  The probabilities of the orientations are calculated
                  from their electrostatic free energy.  The structure
                  considered here is a cross section through a
                  rectangular silicon nanowire lying on a an oxide
                  surface with a back-gate contact.  The oxide surface
                  of the nanowire is functionalized by biomolecules in
                  an electrolyte with an electrode.  Various
                  combinations of PNA (peptide nucleic acid),
                  single-stranded DNA, and double-stranded DNA are
                  simulated to discuss the various states of a DNA
                  sensor.  A charge-transport models yields the
                  current through the transducer that compares well
                  with measurements.},
  note = {(Acceptance rate 57\%.)}
}
@inproceedings{Punzet2009quantitative,
  author = {M. Punzet AND H. Karlic AND F. Varga AND C. Heitzinger AND D. Baurecht},
  title = {Quantitative evaluation of surface modifications used for {BioFET}s by {FTIR}-{ATR} spectroscopy},
  booktitle = {Proc. 4th International Workshop on Vibrational Spectroscopy of Thin Films},
  address = {Potsdam, Germany},
  pages = {},
  year = 2009,
  month = {3--5 June},
  isbn = {}
}
@inproceedings{Windbacher2009study,
  author = {Thomas Windbacher AND Viktor Sverdlov AND Siegfried Selberherr AND Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer},
  title = {Study of the Properties of Biotin-Streptavidin Sensitive {BioFET}s},
  booktitle = {Proc. International Conference on Biomedical Electronics and Devices (BIODEVICES 2009)},
  address = {Porto, Portugal},
  pages = {24-30},
  year = 2009,
  month = jan,
  isbn = {},
  url = {},
  pdf = {Papers/windbacher2009study.pdf},
  abstract = {In this work the properties of a biotin-streptavidin BioFET
                  have been studied numerically with homogenized
                  boundary interface conditions as the link between
                  the oxide of the FET and the analyte which contains
                  the bio-sample.  The biotin-streptavidin reaction
                  pair is used in purification and detection of
                  various biomolecules; the strong streptavidin-biotin
                  bond can also be used to attach biomolecules to one
                  another or onto a solid support.  Thus this reaction
                  pair in combination with a FET as the transducer is
                  a powerful setup enabling the detection of a wide
                  variety of molecules with many advantages that stem
                  from the FET, like no labeling, no need of expensive
                  read-out devices, the possibility to put the signal
                  amplification and analysis on the same chip, and
                  outdoor usage without the necessity of a lab.}
}
@inproceedings{Liu2008overcoming,
  author = {Yang Liu AND Klas Lilja AND Clemens Heitzinger AND Robert W. Dutton},
  title = {Overcoming the Screening-Induced Performance Limits of Nanowire Biosensors: a Simulation Study on the Effect of Electro-Diffusion Flow},
  booktitle = {IEDM 2008 Technical Digest},
  address = {San Francisco, CA, USA},
  key = {IEDM 2008},
  pages = {491-494},
  year = 2008,
  month = dec,
  isbn = {1-4244-2377-4},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=4796733&isnumber=4796592&punumber=4786613&k2dockey=4796733@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Eau+%29&pos=8&access=no},
  pdf = {http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4796733&isnumber=4796592},
  doi = {10.1109/IEDM.2008.4796733},
  abstract = {Device-level simulation capabilities have been developed to
                  self-consistently model the Si-nanowire (NW)
                  biosensor systems.  Our numerical study demonstrates
                  that by introducing electro-diffusion current flow
                  in the electrolyte solutions, the electrostatic
                  screening of the biological charge can be
                  significantly suppressed; an improvement of the
                  sensed signal strength by more than approximately 10
                  times is indicated.  Based on such an operation
                  principle, the screening-induced performance limits
                  on Si-NW biosensors can be overcome.},
  note = {(Most prestigious electron-devices conference; acceptance rate $\approx$33\%.)}
}
@inproceedings{Windbacher2008simulation,
  author = {Thomas Windbacher AND Viktor Sverdlov AND Siegfried Selberherr AND Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer},
  title = {Simulation of Field-Effect Biosensors ({BioFETs})},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2008)},
  address = {Hakone, Japan},
  key = {SISPAD 2008},
  pages = {193-196},
  year = 2008,
  month = sep,
  isbn = {978-1-4244-1753-7},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=4648270&isnumber=4648212&punumber=4636077&k2dockey=4648270@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Eau+%29&pos=9&access=no},
  pdf = {http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4648270&isnumber=4648212},
  doi = {10.1109/SISPAD.2008.4648270},
  abstract = {In this paper a bottom-up approach for modeling field-effect
                  Biosensors (BioFETs) is developed. Starting from the
                  given positions of charged atoms, of a given
                  molecule, the charge and the dipole moment of a
                  single molecule are calculated. This charge and
                  dipole moment are used to calculate the mean surface
                  density and mean dipole moment at the
                  biofunctionalized surface, which are introduced into
                  homogenized interface conditions linking the
                  Angstrom-scale of the molecule with the
                  micrometer-scale of the FET. By considering a
                  single-stranded to double-stranded DNA reaction, we
                  demonstrate the capability of a BioFET to detect a
                  certain DNA and to resolve the DNA orientation.},
  note = {(Acceptance rate 70\%.)}
}
@inproceedings{Ertl2007efficient,
  author = {Otmar Ertl AND Clemens Heitzinger AND Siegfried Selberherr},
  title = {Efficient Coupling of {Monte-Carlo} and Level-Set Methods for Topography Simulation},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2007)},
  address = {Vienna, Austria},
  key = {SISPAD 2007},
  pages = {417-420},
  year = 2007,
  month = sep,
  isbn = {978-3-211-72860-4},
  url = {},
  pdf = {},
  abstract = {We have developed a topography simulation method which
                  combines advanced level-set techniques for surface
                  evolution with Monte Carlo flux calculation. The
                  result is an algorithm with an overall complexity
                  and storage requirement scaling like $O(N \log N)$
                  with surface disretization. The calculation of
                  particle trajectories is highly optimized, since
                  spatial partitioning is used to accelerate ray
                  tracing. The method is demonstrated on Si etching in
                  SF$_6$/O$_2$ plasma.},
  note = {(Acceptance rate 55\%.)}
}
@inproceedings{Damodaran2007investigation,
  author = {Sriraman Damodaran AND Selvakumaran Vadivelmurugan AND Quoc-Thai Do AND Clemens Heitzinger AND Yang Liu AND Robert Dutton AND Gerhard Klimeck},
  title = {Investigation of the Conductance of Silicon Nanowire Biosensors using the {2D} Drift-Diffusion Model},
  booktitle = {Proc. 10th NSTI Nanotech Conference 2007 (NSTI Nanotech 2007)},
  address = {Santa Clara, CA, USA},
  key = {NSTI Nanotech 2007},
  pages = {1374/1-3},
  month = may,
  year = 2007,
  pdf = {Papers/damodaran2007investigation.pdf},
  abstract = {Experiments for silicon biosensors with gate lengths in the
                  range of 200nm to 500nm have not been extensively
                  carried out.  In this paper, simulations were
                  performed for gate lengths proportionally smaller
                  and greater than regular experimental gate lengths.
                  The sensitivity of the biosensors was simulated
                  using a 2D drift-diffusion model in cylindrical
                  coordinates using the Prophet simulator.  In this
                  study simulated conductance results and the
                  respective experimental values are compared. The
                  good agreement between simulation and experiment
                  enables us to predict and optimize the sensitivity
                  of the DNA sensors.

                  The sensitivity was studied in
                  terms of conductance by varying the gate length,
                  probe spacing, binding efficiency and angle of probe
                  from normal.}
}
@inproceedings{Ahmed2007symmetry,
  author = {Shaikh Ahmed AND Muhammad Usman AND Clemens Heitzinger AND Rajib Rahman AND Andrei Schliwa AND Gerhard Klimeck},
  title = {Symmetry Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field},
  booktitle = {AIP Conf. Proc.},
  volume = 893,
  pages = {849-850},
  month = apr,
  year = 2007,
  issn = {0094243X},
  publisher = {AIP},
  doi = {10.1063/1.2730157},
  url = {http://link.aip.org/link/?APCPCS/893/849/1},
  pdf = {http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000849000001&idtype=cvips&prog=normal},
  abstract = {Electrons and holes captured in self-assembled quantum dots
                  (QDs) are subject to symmetry breaking that cannot
                  be represented in with continuum material
                  representations. Atomistic calculations reveal
                  symmetry lowering due to effects of strain and
                  piezo-electric fields. These effects are
                  fundamentally based on the crystal topology in the
                  quantum dots. This work studies these two competing
                  effects and demonstrates the fine structure
                  splitting that has been demonstrated experimentally
                  can be attributed to the underlying atomistic
                  structure of the quantum dots.}
}
@inproceedings{Usman2007strain,
  author = {Muhammad Usman AND Shaikh Ahmed AND Marek Korkusinski AND Clemens Heitzinger AND Gerhard Klimeck},
  title = {Strain and Electronic Structure Interactions in Realistically Scaled Quantum Dot Stacks},
  booktitle = {AIP Conf. Proc.},
  volume = 893,
  pages = {847-848},
  month = apr,
  year = 2007,
  issn = {0094243X},
  publisher = {AIP},
  doi = {10.1063/1.2730156},
  url = {http://link.aip.org/link/?APCPCS/893/847/1},
  pdf = {http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000847000001&idtype=cvips&ident=freesearch&prog=search},
  abstract = {Self-assembled quantum dots (DQ) can be grown as stacks
                  where the QD distance can be controlled with atomic
                  layer control. This distance determines the
                  interaction of the artificial atom states to form
                  artificial molecules. The design of QD stacks
                  becomes complicated since the structures are subject
                  to inhomogeneous, long-range strain and growth
                  imperfections such as non-identical dots and
                  inter-diffused interfaces. This study presents
                  simulations of stacks consistent of three QDs in
                  their resulting inhomogeneous strain field. The
                  simulations are performed with NEMO 3-D which uses
                  the valence force field method to compute the strain
                  and the empirical sp3d5s* tight binding method to
                  compute the electronic structure. Strain is shown to
                  provide a very interesting mixing between states and
                  preferred ordering of the ground state in the
                  top-most or bottom most quantum dot subject to
                  growth asymmetries.}
}
@inproceedings{Heitzinger2006investigation,
  author = {Clemens Heitzinger AND Gerhard Klimeck},
  title = {Investigation of Conventional {DNAFET}s for Genome-wide Detection of Polymorphisms},
  booktitle = {Proc. Eurosensors {XX} 2006},
  address = {Göteborg, Sweden},
  key = {Eurosensors 2006},
  volume = 1,
  pages = {448-449},
  month = sep,
  year = 2006,
  isbn = {91-631-9280-2},
  pdf = {Papers/heitzinger2006investigation.pdf},
  abstract = {Conventional SOI DNAFET devices, being able to detect
                  single-nucleotide polymor phisms, are simulated in a
                  comprehensive approach. These devices can be
                  fabricated in high-density arrays and offer
                  advantages compared to optical detection
                  methods. The influence of device parameters like
                  doping concentration and the size of the exposed
                  sensor area is investigated.}
}
@inproceedings{Klimeck2006nemo3d,
  author = {Gerhard Klimeck AND Michael McLennan AND Matteo Mannino AND Marek Korkusinski AND Clemens Heitzinger AND Rick Kennell AND Steven Clark},
  title = {{NEMO 3-D} and {nanoHUB}: Bridging Research and Education},
  booktitle = {Proc. 6th IEEE Conference on Nanotechnology (IEEE-NANO 2006)},
  address = {Cincinnati, OH, USA},
  key = {IEEE-NANO 2006},
  volume = 2,
  pages = {441-444},
  month = jun,
  year = 2006,
  isbn = {},
  publisher = {IEEE},
  url = {http://ieeexplore.ieee.org/search/freesrchabstract.jsp?arnumber=1717132&isnumber=36119&punumber=11219&k2dockey=1717132@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=7},
  pdf = {http://ieeexplore.ieee.org/iel5/11219/36119/01717132.pdf?tp=&isnumber=36119&arnumber=1717132&punumber=11219},
  abstract = {The 3-D Nanoelectronic Modeling Tool (NEMO 3-D) is an
                  electronic structure simulation code for the
                  analysis of quantum dots, quantum wells, nanowires,
                  and impurities. NEMO 3-D uses the Valence Force
                  Field (VFF) method for strain and the empirical
                  tight binding (ETB) for the electronic structure
                  calculations. Various ETB models are available,
                  ranging from single s orbitals (single band
                  effective mass), over sp$^3$s* to sp$^3$d$^5$s*
                  models, with and without explicit representation of
                  spin. The code is highly optimized for operation on
                  cluster computing systems. Simulations of systems of
                  64 million atoms (strain) and 21 million atoms have
                  been demonstrated. This implies that every atom is
                  accounted for in simulation volumes of (110nm)$^3$
                  and (77nm)$^3$, respectively. Such simulations
                  require parallel execution on 64 itanium2 CPUs for
                  around 12 hours. A simple effective mass calculation
                  of an isolated quantum dot, in contrast, requires
                  about 20 seconds on a single CPU. NEMO 3-D therefore
                  offers the opportunity to engage both educators and
                  advanced researchers, utilizing a single
                  code. nanoHUB.org is the community web site hosted
                  by the Network for Computational Nanotechnology
                  (NCN) dedicated to bridge education, research, and
                  development for the whole nanoscience and
                  nanotechnology community. This paper reviews the
                  mission of the NCN exemplified by the development
                  and deployment of the NEMO 3-D tool.}
}
@inproceedings{Sheikholeslami2005applications,
  author = {Alireza Sheikholeslami AND Farnaz Parhami AND Rene Heinzl AND Elaf Al-Ani AND Clemens Heitzinger AND Fuad Badrieh AND Helmut Puchner AND Tibor Grasser AND Siegfried Selberherr},
  title = {Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2005)},
  address = {Tokyo, Japan},
  key = {SISPAD 2005},
  pages = {187-190},
  year = 2005,
  month = sep,
  isbn = {4-9902762-0-5},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1562056&isnumber=33165&punumber=10443&k2dockey=1562056@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=9},
  pdf = {http://ieeexplore.ieee.org/iel5/10443/33165/01562056.pdf?tp=&isnumber=33165&arnumber=1562056&punumber=10443},
  abstract = {We present an analysis of deposition of silicon nitride and
                  silicon dioxide layers into three-dimensional
                  interconnect structures. The investigations have
                  been performed using our general purpose topography
                  simulator ELSA (Enhanced Level Set Applications). We
                  predict void formation and its characteristics,
                  which play an important role for the formation of
                  cracks which are observed during the passivation of
                  layers covering IC chips.},
  note = {(Acceptance rate 57\%.)}
}
@inproceedings{Sheikholeslami2005inverse,
  author = {Alireza Sheikholeslami AND Stefan Holzer AND Clemens Heitzinger AND Markus Leicht AND Oliver Häberlen AND Josef Fugger AND Tibor Grasser AND Siegfried Selberherr},
  title = {Inverse Modeling of Oxid Deposition Using Measurements of a {TEOS} {CVD} Process},
  booktitle = {Proc. PhD Research in Microelectronics and Electronics 2005},
  address = {Lausanne, Switzerland},
  volume = 2,
  pages = {79-82},
  month = jul,
  year = 2005,
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1542941&isnumber=32955&punumber=10358&k2dockey=1542941@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=8},
  pdf = {http://ieeexplore.ieee.org/iel5/10358/32955/01542941.pdf?tp=&isnumber=32955&arnumber=1542941&punumber=10358},
  doi = {10.1109/RME.2005.1542941},
  abstract = {The goal of this paper is to identify simulation models for
                  the deposition of silicon dioxide layers from TEOS
                  (tetraethoxysilane) in a CVD (chemical vapor
                  deposition) process and to calibrate the parameters
                  of these models by comparing simulation results to
                  SEM (scanning electron microscope) images of
                  deposited layers in trenches with different aspect
                  ratios. We describe the three models used and the
                  parameters which lead to the best results for each
                  model which allows us to draw conclusions on the
                  usefulness of the models.}
}
@inproceedings{Heitzinger2004simulation,
  author = {Clemens Heitzinger AND Christian Ringhofer AND Shaikh Ahmed AND Dragica Vasileska},
  title = {Efficient Simulation of the Full {Coulomb} Interaction in Three Dimensions},
  booktitle = {Proc. 10th International Workshop on Computational Electronics (IWCE 10)},
  address = {West Lafayette, IN, USA},
  key = {IWCE 10},
  pages = {24-25},
  month = oct,
  year = 2004,
  isbn = {},
  publisher = {IEEE},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1407300&isnumber=30514&punumber=9657&k2dockey=1407300@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=12},
  pdf = {http://ieeexplore.ieee.org/iel5/9657/30514/01407300.pdf?tp=&isnumber=30514&arnumber=1407300&punumber=9657},
  doi = {10.1109/IWCE.2004.1407300},
  abstract = {The continued scaling of MOSFETs into the nano-scale regime
                  requires refined models for carrier transport due
                  to, e.g., unintentional doping in the active channel
                  region which gives rise to threshold voltage and
                  on-state current fluctuations. Therefore every
                  transport simulator which is supposed to accurately
                  simulate nano-devices must have a proper model for
                  the inclusion of the Coulomb interactions. This
                  paper proposes to use a 3D FMM (fast multi-pole
                  method) (Greengard and Rokhlin, 1997; Cheng et al.,
                  1999). The FMM is based on the idea of condensing
                  the information of the potential generated by point
                  sources in series expansions. After calculating
                  expansions in a hierarchical manner, the long-range
                  part of the potential is obtained by evaluating the
                  series at the point in question and the short-range
                  part is calculated by direct summation. Its
                  computational effort is only O(n) where n is the
                  number of particles. In summary, the use of the FMM
                  approach for semiconductor transport simulations was
                  validated. Simulation times are decreased
                  significantly and effects due to electron-electron
                  and electron-impurity interactions are observed as
                  expected. Since the FMM algorithm operates
                  independently of the grid used in the MC simulation,
                  it can be easily included into existing MC device
                  simulation codes.}
}
@inproceedings{Sheikholeslami2004three-dimensional,
  author = {Alireza Sheikholeslami AND Clemens Heitzinger AND Tibor Grasser AND Siegfried Selberherr},
  title = {Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method},
  booktitle = {Proc. 24th IEEE International Conference on Microelectronics (MIEL 2004)},
  address = {Niš, Yugoslavia},
  key = {MIEL 2004},
  volume = 1,
  pages = {241-244},
  year = 2004,
  month = may,
  isbn = {0-7803-8166-1},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1314606&isnumber=29143&punumber=9193&k2dockey=1314606@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=13},
  pdf = {http://ieeexplore.ieee.org/iel5/9193/29143/01314606.pdf?tp=&isnumber=29143&arnumber=1314606&punumber=9193},
  abstract = {We present the application of level set and fast marching
                  methods to the simulation of surface topography of a
                  wafer in three dimensions for deposition and etching
                  processes. These simulations rest on many
                  techniques, including a narrow band level set
                  method, fast marching for the eikonal equation,
                  extension of the speed function, transport models,
                  visibility determination, and an iterative equation
                  solver.}
}
@inproceedings{Heitzinger2004study,
  author = {Clemens Heitzinger AND Alireza Sheikholeslami AND Josef Fugger AND Oliver Häber\-len AND Markus Leicht AND Siegfried Selberherr},
  title = {A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm},
  booktitle = {Proc. 205th Meeting of the Electrochemical Society (ECS), Electrochemical Processes in {ULSI} and {MEMS}},
  editor = {H. Deligianni AND S.T. Mayer AND T.P. Moffat AND G.R. Stafford},
  address = {San Antonio, TX, USA},
  key = {205th Meeting of the ECS},
  volume = {PV 2004-17},
  pages = {132-142},
  month = may,
  year = 2004,
  isbn = {1-56677-472-1},
  publisher = {The Electrochemical Society},
  pdf = {Papers/heitzinger2004study.pdf},
  abstract = {The aim of this work is to study the etching of trenches in
                  silicon and the generation of voids during the
                  filling of genuinely three-dimensional trench
                  structures with silicon dioxide or nitride.  The
                  trenches studied are part of the manufacturing
                  process of power MOSFETs, where void-less filling
                  must be achieved.  Another area of applications is
                  capacitance extraction in interconnect structures,
                  where the deliberate inclusion of voids serves the
                  purpose of reducing overall capacitance.
                  Furthermore, these simulations make it possible to
                  analyze the variations on the feature scale
                  depending on the position of the single trench on
                  the wafer and in the reactor.}
}
@inproceedings{Minixhofer2003optimization,
  author = {Rainer Minixhofer AND Stefan Holzer AND Clemens Heitzinger AND Johannes Fellner AND Tibor Grasser AND Siegfried Selberherr},
  title = {Optimization of Electrothermal Material Parameters Using Inverse Modeling},
  booktitle = {Proc. 33rd European Solid-State Device Research Conference (ESSDERC 2003)},
  editor = {José Franca AND Paulo Freitas},
  address = {Estoril, Portugal},
  key = {ESSDERC 2003},
  pages = {363-366},
  year = 2003,
  month = sep,
  isbn = {0-7803-7999-3},
  publisher = {IEEE},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1256889&isnumber=28111&punumber=8890&k2dockey=1256889@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=16},
  pdf = {http://ieeexplore.ieee.org/iel5/8890/28111/01256889.pdf?tp=&isnumber=28111&arnumber=1256889&punumber=8890},
  doi = {10.1109/ESSDERC.2003.1256889},
  abstract = {A method for determining higher order thermal coefficients
                  for electrical and thermal properties of metallic
                  interconnect materials used in semiconductor
                  fabrication is presented. By applying inverse
                  modeling on transient electrothermal
                  three-dimensional finite element simulations the
                  measurements of resistance over time of Polysilicon
                  fuse structures can be matched. This method is
                  intended to be applied to the optimization of
                  Polysilicon fuses for reliability and speed.}
}
@inproceedings{Badrieh2003feature,
  author = {Fuad Badrieh AND Helmut Puchner AND Alireza Sheikholeslami AND Clemens Heitzinger AND Siegfried Selberherr},
  title = {From Feature Scale Simulation to Backend Simulation for a 100nm {CMOS} Process},
  booktitle = {Proc. 33rd European Solid-State Device Research Conference (ESSDERC 2003)},
  editor = {José Franca AND Paulo Freitas},
  address = {Estoril, Portugal},
  key = {ESSDERC 2003},
  pages = {441-444},
  year = 2003,
  month = sep,
  isbn = {0-7803-7999-3},
  publisher = {IEEE},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1256908&isnumber=28111&punumber=8890&k2dockey=1256908@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=15},
  pdf = {http://ieeexplore.ieee.org/iel5/8890/28111/01256908.pdf?tp=&isnumber=28111&arnumber=1256908&punumber=8890},
  doi = {10.1109/ESSDERC.2003.1256908},
  abstract = {The current challenge for TCAD is the prediction of the
                  performance of groups of devices, backends, and --
                  generally speaking -- large parts of the final IC in
                  contrast to the simulation of single devices and
                  their fabrication. This enables one to predictively
                  simulate the performance of the final device
                  depending on different process technologies and
                  parameters, which the simulation of single devices
                  cannot achieve.

                  In this paper we focus on the
                  simulation of backend, interconnect capacitance, and
                  time delays. To that end topography simulations of
                  deposition, etching, and CMP processes in the
                  various metal lines are used to build up the backend
                  stack. The output of the feature scale simulations
                  is used as input to a capacitance extraction tool,
                  whose results are made available directly to the
                  circuit designer.

                  We discuss the utilized simulation
                  tools and their integration. The topography
                  simulations were performed by our tool called ELSA
                  (enhanced level set applications) and the subsequent
                  simulations by RAPHAEL. Finally simulation results
                  for a 100nm process are presented, where the
                  influence of void formation between metal lines
                  profoundly impacts the performance of the whole
                  interconnect stack.}
}
@inproceedings{Heitzinger2003method,
  author = {Clemens Heitzinger AND Alireza Sheikholeslami AND Jong-Mun Park AND Siegfried Selberherr},
  title = {A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate {MOSFET}},
  booktitle = {Proc. 33rd European Solid-State Device Research Conference (ESSDERC 2003)},
  editor = {José Franca AND Paulo Freitas},
  address = {Estoril, Portugal},
  key = {ESSDERC 2003},
  pages = {457-460},
  year = 2003,
  month = sep,
  isbn = {0-7803-7999-3},
  publisher = {IEEE},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1256912&isnumber=28111&punumber=8890&k2dockey=1256912@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=14},
  pdf = {http://ieeexplore.ieee.org/iel5/8890/28111/01256912.pdf?tp=&isnumber=28111&arnumber=1256912&punumber=8890},
  doi = {10.1109/ESSDERC.2003.1256912},
  abstract = {The error of the numeric approximation of the semiconductor
                  device equations particularly depends on the grid
                  used for the discretization. Since the most
                  interesting regions of the device are generally
                  straightforward to identify, the method of choice is
                  to use structurally aligned grids. Here we present
                  an algorithm for generating structurally aligned
                  grids including anisotropy and for producing grids
                  whose resolution varies over several orders of
                  magnitude. Furthermore the areas with increased
                  resolution and the corresponding resolutions can be
                  defined in a flexible manner and criteria on grid
                  quality can be enforced.

                  The grid generation
                  algorithm was applied to sample structures which
                  highlight the features of this method. Furthermore
                  we generated grids for the simulation of a high
                  voltage trench gate MOSFET. In order to resolve the
                  junction regions accurately, four regions were
                  defined where the grid was grown in several
                  directions with varying resolutions. Finally device
                  simulations performed by MINIMOS NT show current
                  voltage characteristics and the threshold voltage.}
}
@inproceedings{Wessner2003error,
  author = {Wilfried Wessner AND Clemens Heitzinger AND Andreas Hössinger AND Siegfried Selberherr},
  title = {Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2003)},
  address = {Boston, MA, USA},
  key = {SISPAD 2003},
  pages = {109-112},
  year = 2003,
  month = sep,
  isbn = {0-7803-7826-1},
  publisher = {IEEE},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1233649&isnumber=27642&punumber=8729&k2dockey=1233649@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=17},
  pdf = {http://ieeexplore.ieee.org/iel5/8729/27642/01233649.pdf?tp=&isnumber=27642&arnumber=1233649&punumber=8729},
  abstract = {We present a computational method for locally adapted
                  conformal anisotropic tetrahedral mesh
                  refinement. The element size is determined by an
                  anisotropy function which is governed by an error
                  estimation driven ruler according to an adjustable
                  maximum error. Anisotropic structures are taken into
                  account to reduce the amount of elements compared to
                  strict isotropic refinement. The spatial resolution
                  in three-dimensional unstructured tetrahedral meshes
                  for diffusion simulation can be dynamically
                  increased.}
}
@inproceedings{Heitzinger2003algorithm,
  author = {Clemens Heitzinger AND Andreas Hössinger AND Siegfried Selberherr},
  title = {An Algorithm for Smoothing Three-Dimensional {Monte Carlo} Ion Implantation Simulation Results},
  booktitle = {Proc. 4th IMACS Symposium on Mathematical Modelling (MathMod 2003)},
  editor = {I. Troch AND F. Breitenecker},
  address = {Vienna, Austria},
  key = {MathMod 2003},
  pages = {702-711},
  year = 2003,
  month = feb,
  isbn = {3-901608-24-9},
  pdf = {Papers/heitzinger2003algorithm.pdf},
  abstract = {We present an algorithm for smoothing results of
                  three-dimensional Monte Carlo ion implantation
                  simulations and translating them from the grid used
                  for the Monte Carlo simulation to an arbitrary
                  unstructured three-dimensional grid. This algorithm
                  is important for joining various simulations of
                  semiconductor manufacturing process steps, where
                  data have to be smoothed or transferred from one
                  grid to another. Furthermore different grids must be
                  used since using ortho-grids is mandatory because of
                  performance reasons for certain Monte Carlo
                  simulation methods. The algorithm is based on
                  approximations by generalized Bernstein
                  polynomials. This approach was put on a
                  mathematically sound basis by proving several
                  properties of these polynomials. It does not suffer
                  from the ill effects of least squares fits of
                  polynomials of fixed degree as known from the
                  popular response surface method.  The smoothing
                  algorithm which works very fast is described and in
                  order to show its applicability, the results of
                  smoothing a three-dimensional real world
                  implantation example are given and compared with
                  those of a least squares fit of a multivariate
                  polynomial of degree two, which yielded unusable
                  results.}
}
@inproceedings{Heitzinger2002increasing,
  author = {Clemens Heitzinger AND Josef Fugger AND Oliver Häberlen AND Siegfried Selberherr},
  title = {On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method},
  booktitle = {Proc. 32th European Solid-State Device Research Conference (ESSDERC 2002)},
  editor = {G. Baccarani AND E. Gnani AND M. Rudan},
  address = {Florence, Italy},
  key = {ESSDERC 2002},
  pages = {347-350},
  year = 2002,
  month = sep,
  isbn = {88-900847-8-2},
  publisher = {University of Bologna},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1503870&isnumber=32254&punumber=10060&k2dockey=1503870@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=10},
  pdf = {http://ieeexplore.ieee.org/iel5/10060/32254/01503870.pdf?tp=&isnumber=32254&arnumber=1503870&punumber=10060},
  abstract = {Deposition and etching in Silicon trenches is an important
                  step of today’s semiconductor
                  manufacturing. Understanding the surface evolution
                  enables to predict the resulting profiles and thus
                  to optimize process parameters. Simulations using
                  the radiosity modeling approach and the level set
                  method provide accurate results, but their speed has
                  to be considered when employing advanced models and
                  for purposes of inverse modeling.

                  In this paper
                  strategies for increasing the accuracy of deposition
                  simulations while decreasing simulation times are
                  presented. Two algorithms were devised: first,
                  intertwining narrow banding and extending the speed
                  function yields a fast and accurate level set
                  algorithm. Second, an algorithm which coarsens the
                  surface reduces the computational demands of the
                  radiosity method.

                  Finally measurements of a typical
                  TEOS deposition process are compared with
                  simulation results both with and without coarsening
                  of the surface elements. It was found that the
                  computational effort is significantly reduced
                  without sacrificing the accuracy of the
                  simulations.}
}
@inproceedings{Heitzinger2002simulation,
  author = {Clemens Heitzinger AND Josef Fugger AND Oliver Häberlen AND Siegfried Selberherr},
  title = {Simulation and Inverse Modeling of {TEOS} Deposition Processes Using a Fast Level Set Method},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2002)},
  address = {Kobe, Japan},
  key = {SISPAD 2002},
  pages = {191-194},
  year = 2002,
  month = sep,
  isbn = {4-89114-027-5},
  publisher = {Business Center for Academic Societies, Japan},
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1034549&isnumber=22206&punumber=8038&k2dockey=1034549@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=18},
  pdf = {http://ieeexplore.ieee.org/iel5/8038/22206/01034549.pdf?tp=&isnumber=22206&arnumber=1034549&punumber=8038},
  doi = {10.1109/SISPAD.2002.1034549},
  abstract = {Deposition and etching of silicon trenches is an important
                  manufacturing step for state of the art memory
                  cells. Understanding and simulating the transport of
                  gas species and surface evolution enables to achieve
                  void-less filling of deep trenches, to predict the
                  resulting profiles, and thus to optimize process
                  parameters with respect to manufacturing throughput
                  and the quality of the resulting memory cells. For
                  the simulation of the SiO$_2$ deposition process
                  from TEOS (Tetraethoxysilane), the level set method
                  was used in addition to physical models. The level
                  set algorithm devised minimizes computational effort
                  while ensuring high accuracy by intertwining narrow
                  banding and extending the speed function. In order
                  to make the predictions of the simulation more
                  accurate, model parameters were extracted by
                  comparing the step coverages of the deposited layers
                  in the simulation with those of SEM (scanning
                  electron microscope) images.}
}
@inproceedings{Heitzinger2002calibrated,
  author = {Clemens Heitzinger AND Siegfried Selberherr},
  title = {A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution},
  booktitle = {Proc. 23rd IEEE International Conference on Microelectronics (MIEL 2002)},
  address = {Niš, Yugoslavia},
  key = {MIEL 2002},
  pages = {431-434},
  year = 2002,
  month = may,
  url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1003291&isnumber=21637&punumber=7858&k2dockey=1003291@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=19},
  pdf = {http://ieeexplore.ieee.org/iel5/7858/21637/01003291.pdf?tp=&isnumber=21637&arnumber=1003291&punumber=7858},
  doi = {10.1109/MIEL.2002.1003291},
  abstract = {The formation and dissolution of silicon self-interstitial
                  clusters is linked to the phenomenon of TED
                  (transient enhanced diffusion) which in turn has
                  gained importance in the manufacturing of
                  semiconductor devices. Based on theoretical
                  considerations and measurements of the number of
                  self-interstitial clusters during a thermal step we
                  were interested in finding a suitable model for the
                  formation and dissolution of self-interstitial
                  clusters and extracting corresponding model
                  parameters for two different technologies (i.e.,
                  material parameter sets). In order to automate the
                  inverse modeling part a general optimization
                  framework was used. Additional to solving this
                  problem the same setup can solve a wide range of
                  inverse modeling problems occurring in the domain of
                  process simulation. Finally the results are
                  discussed and compared with a previous model.}
}
@inproceedings{Grasser2002impact,
  author = {Tibor Grasser AND Hans Kosina AND Clemens Heitzinger AND Siegfried Selberherr},
  title = {An Impact Ionization Model Including an Explicit Cold Carrier Population},
  booktitle = {Proc. 5th International Conference on Modeling and Simulation of Microsystems (MSM 2002)},
  address = {San Juan, Puerto Rico, USA},
  key = {MSM 2002},
  pages = {572-575},
  year = 2002,
  month = apr,
  url = {http://www.nsti.org/procs/MSM2002/11/X21.08},
  pdf = {http://www.nsti.org/publ/MSM2002/225.pdf},
  abstract = {Conventional macroscopic impact ionization models which use
                  the average carrier energy as main parameter cannot
                  accurately describe the phenomenon in modern
                  miniaturized devices. Here we present a new model
                  which is based on an analytic expression for the
                  distribution function. In particular, the
                  distribution function model accounts explicitly for
                  a hot and a cold carrier population in the drain
                  region of MOS transistors. The parameters are
                  determined by three even moments obtained from a
                  solution of a six moments transport model. Together
                  with a nonparabolic description of the density of
                  states accurate closed form macroscopic impact
                  ionization models can be derived based on familiar
                  microscopic descriptions.}
}
@inproceedings{Heitzinger2001optimization,
  author = {Clemens Heitzinger AND Siegfried Selberherr},
  title = {Optimization for {TCAD} Purposes Using {Bernstein} Polynomials},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001)},
  editor = {D. Tsoukalas AND C. Tsamis},
  address = {Athens, Greece},
  key = {SISPAD 2001},
  pages = {420-423},
  year = 2001,
  month = sep,
  isbn = {3-211-83708-6},
  publisher = {Springer, Wien, New York},
  pdf = {Papers/heitzinger2001optimization.pdf},
  abstract = {The optimization of computationally expensive objective
                  functions requires approximations that preserve the
                  global properties of the function under
                  investigation.  The RSM approach of using
                  multivariate polynomials of degree two can only
                  preserve the local properties of a given function
                  and is therefore not well-suited for global
                  optimization tasks. In this paper we discuss
                  generalized Bernstein polynomials that provide
                  faithful approximations by converging uniformly to
                  the given function. Apart from being useful for
                  optimization tasks, they can also be used for
                  solving design for manufacturability problems.}
}
@inproceedings{Gehring2001TCAD,
  author = {Andreas Gehring AND Clemens Heitzinger AND Tibor Grasser AND Siegfried Selberherr},
  title = {{TCAD} Analysis of Gain Cell Retention Time for {SRAM} Applications},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001)},
  editor = {D. Tsoukalas AND C. Tsamis},
  address = {Athens, Greece},
  key = {SISPAD 2001},
  pages = {416-419},
  year = 2001,
  month = sep,
  isbn = {3-211-83708-6},
  publisher = {Springer, Wien, New York},
  pdf = {Papers/gehring2001tcad.pdf},
  abstract = {We present simulations of a recently published SRAM memory
                  gain cell consisting of two transistors and one MOS
                  capacitor, representing an alternative to
                  conventional six transistor SRAMs. Inverse modeling
                  is used to fit a given device characteristic to
                  measurement data. To account for de-charging due to
                  tunneling, we use a simple, non-local tunneling
                  model and calibrate it with data from literature. By
                  optimization, we find values for the contact
                  voltages in the off-region at which the retention
                  time is a maximum.}
}
@inproceedings{Pyka2001monitoring,
  author = {Wolfgang Pyka AND Clemens Heitzinger AND Naoki Tamaoki AND Toshiro Takase AND Toshimitsu Ohmine AND Siegfried Selberherr},
  title = {Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon {CVD}},
  booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001)},
  editor = {D. Tsoukalas AND C. Tsamis},
  address = {Athens, Greece},
  key = {SISPAD 2001},
  pages = {124-127},
  year = 2001,
  month = sep,
  isbn = {3-211-83708-6},
  publisher = {Springer, Wien, New York},
  pdf = {Papers/pyka2001monitoring.pdf},
  abstract = {Experiments of As-doped poly-silicon deposition have shown
                  that under certain process conditions step coverages
                  > 1 can be achieved. We have developed a new model
                  for the simulation of As-doped poly-silicon
                  deposition, which takes into account surface
                  coverage dependent sticking coefficients and surface
                  coverage dependent As incorporation and desorption
                  rates. The additional introduction of Langmuir type
                  time-dependent surface coverage enabled the
                  reproduction of the bottom-up filling of the
                  trenches. In addition the rigorous treatment of the
                  time-dependent surface coverage allows to trace the
                  in-situ doping of the deposited film.  Simulation
                  results are shown for poly-Si deposition into
                  0.1$\mu$m wide and 7$\mu$m deep, high aspect ratio
                  trenches.}
}

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