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@inproceedings{Tubeuf2024improving,
author = {Carlotta Tubeuf AND Jakob aus der Schmitten AND René Hofmann AND Clemens Heitzinger AND Felix Birkelbach},
title = {Improving control of energy systems with reinforcement learning: application to a reversible pump turbine},
booktitle = {Proc. 18th ASME International Conference on Energy Sustainability (ES 2024)},
address = {Anaheim, CA, USA},
key = {ES 2024},
pages = {TBD},
month = jul,
ignored_month = {15--17 July},
year = 2024,
url = {TBD},
pdf = {Papers/Tubeuf2024improving.pdf},
doi = {TBD},
note = {\textit{At press}}
}
@inproceedings{Lorang2024hierarchical,
author = {Pierrick Lorang AND Horvath Helmut AND Tobias Kietreiber AND Patrik Zips AND Clemens Heitzinger AND Matthias Scheutz},
title = {Adapting to the ``open world'': the utility of hybrid hierarchical reinforcement learning and symbolic planning},
booktitle = {Proc. 2024 IEEE International Conference on Robotics and Automation (ICRA 2024)},
key = {ICRA 2024},
month = may,
ignored_month = {13--17 May},
year = 2024,
url = {TBD},
pdf = {Papers/Lorang2024adapting.pdf},
doi = {TBD},
note = {\textit{At press}}
}
@inproceedings{Ruzicka2024centrality,
author = {Laurenz Ruzicka AND Bernhard Strobl AND Bernhard Kohn AND Clemens Heitzinger},
title = {Centrality of the fingerprint core location},
booktitle = {Proc. 17th International Conference on Bio-Inspired Systems and Signal Processing (BIOSIGNALS 2024)},
address = {Rome, Italy},
key = {BIOSIGNALS 2024},
pages = {713-720},
month = {21--23 February},
year = 2024,
url = {https://doi.org/10.5220/0012309300003657},
pdf = {Papers/Ruzicka2024centrality.pdf},
doi = {10.5220/0012309300003657},
note = {Won Best Poster Award.}
}
@inproceedings{Holly2022autoencoder,
author = {Stephanie Holly AND Robin Heel AND Denis Katic AND Leopold Schoeffl AND Andreas Stiftinger AND Peter Holzner AND Thomas Kaufmann AND Bernhard Haslhofer AND Daniel Schall AND Clemens Heitzinger AND Jana Kemnitz},
title = {Autoencoder based anomaly detection and explained fault localization in industrial cooling systems},
booktitle = {Proc. 7th European Conference of the Prognostics and Health Management Society (PHM Society European Conference)},
address = {Turin, Italy},
key = {PHME 2022},
pages = {200-210},
month = {6--8 July},
year = 2022,
url = {https://doi.org/10.36001/phme.2022.v7i1.3349},
pdf = {Papers/Holly2022autoencoder.pdf},
doi = {10.36001/phme.2022.v7i1.3349}
}
@inproceedings{Taghizadeh2022Bayesian,
author = {Leila Taghizadeh AND Ahmad Karimi AND Clemens Heitzinger},
title = {{Bayesian} approach for inverse problems in tomographic imaging},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2022)},
address = {Atlanta, Georgia, USA},
key = {SIAM UQ 2022},
pages = {83},
month = {12--15 April},
year = 2022
}
@inproceedings{Holly2021evaluation,
author = {Stephanie Holly AND Thomas Hiessl AND Safoura Rezapour Lakani AND Daniel Schall AND Clemens Heitzinger AND Jana Kemnitz},
title = {Evaluation of hyperparameter optimization approaches in an industrial federated learning system},
booktitle = {Proc. 4th International Data Science Conference (IDCS 2021)},
address = {digital event},
key = {IDCS 2021},
pages = {25-30},
month = {20--21 October},
year = 2021,
url = {https://doi.org/10.1007/978-3-658-36295-9_1},
pdf = {Papers/Holly2021evaluation.pdf},
doi = {10.1007/978-3-658-36295-9_1},
abstract = {Federated Learning (FL) decouples model training from the
need for direct access to the data and allows
organizations to collaborate with industry partners
to reach a satisfying level of performance without
sharing vulnerable business information. The
performance of a machine learning algorithm is
highly sensitive to the choice of its
hyperparameters. In an FL setting, hyperparameter
optimization poses new challenges. In this work, we
investigated the impact of different hyperparameter
optimization approaches in an FL system. In an
effort to reduce communication costs, a critical
bottleneck in FL, we investigated a local
hyperparameter optimization approach that – in
contrast to a global hyperparameter optimization
approach – allows every client to have its own
hyperparameter configuration. We implemented these
approaches based on grid search and Bayesian
optimization and evaluated the algorithms on the
MNIST data set using an i.i.d. partition and on an
Internet of Things (IoT) sensor based industrial
data set using a non-i.i.d. partition.}
}
@inproceedings{Karimi2021Bayesian,
author = {Ahmad Karimi AND Leila Taghizadeh AND Clemens Heitzinger},
title = {Optimal {Bayesian} experimental design for {EIT} inverse problems},
booktitle = {Proc. SIAM Conference on Computational Science and Engineering (CSE 2021)},
address = {Virtual conference, Fort Worth, Texas, USA},
key = {SIAM CSE 2021},
pages = {online},
month = {1--5 March},
year = 2021
}
@inproceedings{Heitzinger2020computational,
author = {Clemens Heitzinger AND Daniel Pasterk AND Leila Taghizadeh},
title = {Computational {Bayesian} inversion for nanocapacitor-array biosensors and electrical-impedance tomography},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2020)},
address = {Munich, Germany},
key = {SIAM UQ 2020},
pages = {online},
month = {24--27 March},
year = 2020,
note = {\textit{Conference canceled due to COVID-19 pandemic}}
}
@inproceedings{Khodadadian2020inversion,
author = {Amirreza Khodadadian AND Nima Noii AND Maryam Parvizi AND Mostafa Abbaszadeh AND Thomas Wick AND Clemens Heitzinger},
title = {{Bayesian} inversion for variational phase-field fracture problems},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2020)},
address = {Munich, Germany},
key = {SIAM UQ 2020},
pages = {online},
month = {24--27 March},
year = 2020,
note = {\textit{Conference canceled due to COVID-19 pandemic}}
}
@inproceedings{Lenzi2020interpreting,
author = {Ervin K. Lenzi AND Luiz R. Evangelista AND Leila Taghizadeh AND Daniel Pasterk AND Rafael S. Zola AND Trifce Sandev AND Clemens Heitzinger AND Irina Petreska},
title = {Interpreting impedance spectroscopy data by using {Poisson-Nernst-Planck} anomalous models},
booktitle = {Proc. DPG (Deutsche physikalische Gesellschaft) Spring Meeting of the Condensed Matter Section},
address = {Dresden, Germany},
key = {DPG 2020},
pages = {DY 56.5},
month = {15--20 March},
year = 2020,
note = {\textit{Conference canceled due to COVID-19 pandemic}}
}
@inproceedings{Cossettini2019determination,
author = {Andrea Cossettini AND Benjamin Stadlbauer AND Jose A. Morales Escalante AND Leila Taghizadeh AND Luca Selmi AND Clemens Heitzinger},
title = {Determination of micro- and nano-particle properties by multi-frequency {Bayesian} methods and applications to nanoelectrode array sensors},
booktitle = {Proc. IEEE Sensors 2019},
address = {Montreal, Canada},
key = {IEEE Sensors 2019},
pages = {1-4},
month = {27--30 October},
year = 2019
}
@inproceedings{Blankrot2019efficiently,
author = {Boaz Blankrot AND Clemens Heitzinger},
title = {Efficiently optimizing inclusion rotation angle for maximal power flow},
booktitle = {Proc. 14th International Conference on Mathematical and Numerical Aspects of Wave Propagation (Waves)},
address = {Vienna, Austria},
key = {Waves 2019},
pages = {480-481},
month = {25--30 August},
year = 2019
}
@inproceedings{Taghizadeh2019Innsbruck,
author = {Leila Taghizadeh AND Clemens Heitzinger},
title = {{Bayesian} inference for two inverse problems in tomography and biofilms},
booktitle = {Proc. International Conference on Scientific Computation and Differential Equations 2019 (SciCADE 2019)},
address = {Innsbruck, Austria},
key = {SciCADE 2019},
pages = {280},
month = {22--26 July},
year = 2019
}
@inproceedings{Heitzinger2019modeling,
author = {Clemens Heitzinger AND Amirreza Khodadadian AND Daniel Pasterk AND Leila Taghizadeh},
title = {Modeling and simulation of nanotechnological sensors},
booktitle = {Proc. 9th International Congress on Industrial and Applied Mathematics (ICIAM 2019)},
address = {Valencia, Spain},
key = {ICIAM 2019},
pages = {309},
month = {15--19 July},
year = 2019
}
@inproceedings{Heitzinger2019Bayesian,
author = {Clemens Heitzinger AND Leila Taghizadeh},
title = {{Bayesian} {PDE} inversion in electrical-impedance tomography},
booktitle = {Proc. 9th International Congress on Industrial and Applied Mathematics (ICIAM 2019)},
address = {Valencia, Spain},
key = {ICIAM 2019},
pages = {352},
month = {15--19 July},
year = 2019
}
@inproceedings{Khodadadian2019GAMM,
author = {Amirreza Khodadadian AND Clemens Heitzinger},
title = {Bayesian inversion for nanoscale field-effect sensors using the stochastic drift-diffusion-{Poisson-Boltzmann} system},
booktitle = {Proc. 90th Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM)},
address = {Vienna, Austria},
key = {GAMM 2019},
pages = {423},
month = {18--22 February},
year = 2019
}
@inproceedings{Schneider2019GAMM,
author = {Patrick Schneider AND Magdalena Schneider AND Gerhard Schütz AND Clemens Heitzinger},
title = {A clustering algorithm for single-molecule localization in super-resolution microscopy},
booktitle = {Proc. 90th Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM)},
address = {Vienna, Austria},
key = {GAMM 2019},
pages = {532},
month = {18--22 February},
year = 2019
}
@inproceedings{Taghizadeh2019GAMM,
author = {Leila Taghizadeh AND Clemens Heitzinger},
title = {Bayesian analysis for the {Poisson-Boltzmann} equation modeling electrical-impedance tomography devices},
booktitle = {Proc. 90th Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM)},
address = {Vienna, Austria},
key = {GAMM 2019},
pages = {422},
month = {18--22 February},
year = 2019
}
@inproceedings{Blankrot2018automated,
author = {Boaz Blankrot AND Clemens Heitzinger},
title = {Automated Design of Photonic Crystal Demultiplexers},
booktitle = {Proc. 12th International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials 2018)},
address = {Espoo, Finland},
key = {Metamaterials 2018},
pages = {55-77},
month = {27 August -- 1 September},
year = 2018
}
@inproceedings{Blankrot2018optimization,
author = {Boaz Blankrot AND Clemens Heitzinger},
title = {Optimization centric approach for electromagnetic scattering from metamaterials},
booktitle = {Proc. 2018 SIAM Annual Meeting (AN18)},
address = {Portland, OR, USA},
key = {SIAM AN 2018},
pages = {62},
month = {9--13 July},
year = 2018
}
@inproceedings{Heitzinger2018Bayesian,
author = {Clemens Heitzinger AND Jose Morales Escalante AND Benjamin Stadlbauer AND Leila Taghizadeh},
title = {{Bayesian} estimation and machine learning: current problems and challenges with examples in electrical impedance tomography and nanosensors},
booktitle = {Proc. Workshop on Research Challenges and Opportunities at the interface of Machine Learning and Uncertainty Quantification},
address = {University of Southern California, Los Angeles, CA, USA},
pages = {online},
month = {4--6 June},
year = 2018
}
@inproceedings{Pammer2018utilizing,
author = {Gudmund Pammer AND Stefan Rigger AND Clemens Heitzinger},
title = {Utilizing multisymmetry properties in uncertainty quantification},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
address = {Garden Grove, CA, USA},
key = {SIAM UQ 2018},
pages = {23-24},
month = {16--19 April},
year = 2018
}
@inproceedings{Stadlbauer2018Bayesian,
author = {Benjamin Stadlbauer AND Leila Taghizadeh AND Jose Morales Escalante AND Clemens Heitzinger AND Andrea Cossettini AND Luca Selmi},
title = {{Bayesian} estimation for transport equations for nanocapacitors},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
address = {Garden Grove, CA, USA},
key = {SIAM UQ 2018},
pages = {69-70},
month = {16--19 April},
year = 2018
}
@inproceedings{Cossettini2018calibration,
author = {Andrea Cossettini AND Paolo Scarbolo AND Jose Morales Escalante AND Benjamin Stadlbauer AND Naseer Muhammad AND Leila Taghizadeh AND Clemens Heitzinger AND Luca Selmi},
title = {Calibration, compensation, parameter estimation, and uncertainty quantification for nanoelectrode array biosensors},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
address = {Garden Grove, CA, USA},
key = {SIAM UQ 2018},
pages = {81},
month = {16--19 April},
year = 2018
}
@inproceedings{Khodadadian2018multi-level,
author = {Amirreza Khodadadian AND Maryam Parvizi AND Clemens Heitzinger},
title = {Optimal multi-level {Monte Carlo} and adaptive grid refinement for the stochastic drift-diffusion-{Poisson} System},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
address = {Garden Grove, CA, USA},
key = {SIAM UQ 2018},
pages = {81-82},
month = {16--19 April},
year = 2018
}
@inproceedings{Morales2018uncertainty,
author = {Jose Morales Estimation AND Clemens Heitzinger},
title = {Uncertainty quantification for the {Boltzmann-Poisson} system},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
address = {Garden Grove, CA, USA},
key = {SIAM UQ 2018},
pages = {93},
month = {16--19 April},
year = 2018
}
@inproceedings{Taghizadeh2018Bayesian,
author = {Leila Taghizadeh AND Jose Morales Escalante AND Benjamin Stadlbauer AND Clemens Heitzinger},
title = {{Bayesian} estimation for a tomography problem},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (UQ 2018)},
address = {Garden Grove, CA, USA},
key = {SIAM UQ 2018},
pages = {138},
month = {16--19 April},
year = 2018
}
@inproceedings{Taghizadeh2017stochastic,
author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
title = {The stochastic drift-diffusion-{Poisson} system for modeling nanowire and nanopore sensors},
editor = {P. Quintela AND others},
booktitle = {Progress in Industrial Mathematics at ECMI 2016},
pages = {309-317},
year = 2017,
volume = 26,
organization = {Mathematics in Industry},
publisher = {Springer},
doi = {10.1007/978-3-319-63082-3_48},
abstract = {We use the stochastic drift-diffusion-Poisson system to
model charge transport in nanoscale devices. This
stochastic transport equation makes it possible to
describe device variability, noise, and
fluctuations. We present---as theoretical
results---an existence and local uniqueness theorem
for the weak solution of the stochastic
drift-diffusion-Poisson system based on a
fixed-point argument in appropriate function
spaces. We also show how to quantify random-dopant
effects in this formulation. Additionally, we have
developed an optimal multi-level Monte-Carlo method
for the approximation of the solution. The method is
optimal in the sense that the computational work is
minimal for a given error tolerance.}
}
@inproceedings{Taghizadeh2017Bath,
author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
title = {Optimal multi-level randomized-quasi-{Monte-Carlo} methods for the stochastic drift-diffusion-{Poisson} system and for stochastic homogenization},
booktitle = {Proc. International Conference on Scientific Computation and Differential Equations 2017 (SciCADE 2017)},
address = {Bath, UK},
key = {SciCADE 2017},
pages = {129},
month = {11--15 Sep},
year = 2017
}
@inproceedings{Taghizadeh2017USNCCM,
author = {Leila Taghizadeh AND Amirreza Khodadadian AND Stefan Rigger AND Clemens Heitzinger},
title = {Optimal multi-level {Monte-Carlo} methods for the stochastic drift-diffusion-{Poisson} system and for stochastic homogenization},
booktitle = {Proc. 14th US National Congress on Computational Mechanics (USNCCM)},
address = {Montreal, Canada},
key = {USNCCM 2017},
pages = {321},
month = {17--20 July},
year = 2017
}
@inproceedings{Khodadadian2017USNCCM,
author = {Amirreza Khodadadian AND Clemens Heitzinger AND Kiarash Hosseini AND Reza Kalantarinejad AND Marjan Hedayati AND Ali Manzour-ol-Ajdad},
title = {Optimal sensitivity of nanowire field-effect troponin sensors},
booktitle = {Proc. 14th US National Congress on Computational Mechanics (USNCCM)},
address = {Montreal, Canada},
key = {USNCCM 2017},
pages = {407},
month = {17--20 July},
year = 2017,
note = {\textit{Accepted for publication}}
}
@inproceedings{Blankrot2017Salzburg,
author = {Boaz Blankrot AND Clemens Heitzinger},
title = {Multiple scattering approach for dielectric metamaterial analysis},
booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
address = {Salzburg, Austria},
key = {ANADAY 2017},
pages = {17},
month = {4--5 May},
year = 2017
}
@inproceedings{Khodadadian2017Salzburg,
author = {Amirreza Khodadadian AND Leila Taghizadeh AND Clemens Heitzinger},
title = {Optimal multi-level {Monte Carlo} method for the stochastic drift-diffusion-Poisson system},
booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
address = {Salzburg, Austria},
key = {ANADAY 2017},
pages = {16},
month = {4--5 May},
year = 2017
}
@inproceedings{Pammer2017Salzburg,
author = {Gudmund Pammer AND Stefan Rigger AND Clemens Heitzinger},
title = {Computing cubature formulas for multisymmetric functions and applications to stochastic partial differential equations},
booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
address = {Salzburg, Austria},
key = {ANADAY 2017},
pages = {15},
month = {4--5 May},
year = 2017
}
@inproceedings{Rigger2017Salzburg,
author = {Stefan Rigger AND Gudmund Pammer AND Clemens Heitzinger},
title = {Approximation of multisymmetric functions},
booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
address = {Salzburg, Austria},
key = {ANADAY 2017},
pages = {14},
month = {4--5 May},
year = 2017
}
@inproceedings{Mitscha-Baude2017Salzburg,
author = {Gregor Mitscha-Baude AND Benjamin Stadlbauer AND Clemens Heitzinger},
title = {Simulation of nanopores with the {Poisson-Nernst-Planck-Stokes} and {Fokker-Planck} equations and adaptive finite elements},
booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
address = {Salzburg, Austria},
key = {ANADAY 2017},
pages = {13},
month = {4--5 May},
year = 2017
}
@inproceedings{Stadlbauer2017Salzburg,
author = {Benjamin Stadlbauer AND Gregor Mitscha-Baude AND Clemens Heitzinger},
title = {Brownian-dynamics simulations of nanopore protein sensing},
booktitle = {Proc. 13th Austrian Numerical Analysis Day 2017},
address = {Salzburg, Austria},
key = {ANADAY 2017},
pages = {12},
month = {4--5 May},
year = 2017
}
@inproceedings{Blankrot2017integral,
author = {Boaz Blankrot AND Clemens Heitzinger},
title = {Integral equation solver for metamaterial design},
booktitle = {Proc. SIAM Conference on Computational Science and Engineering (CSE 2017},
address = {Atlanta, GA, USA},
key = {SIAM CSE 2017},
pages = {149},
month = {27 February -- 3~March},
year = 2017
}
@inproceedings{Heitzinger2017optimal,
author = {Clemens Heitzinger AND Amirreza Khodadadian AND Gudmund Pammer AND Stefan Rigger AND Leila Taghizadeh},
title = {Optimal numerical methods for stochastic {PDEs}},
booktitle = {Proc. SIAM Conference on Computational Science and Engineering (CSE 2017},
address = {Atlanta, GA, USA},
key = {SIAM CSE 2017},
pages = {129},
month = {27 February -- 3~March},
year = 2017
}
@inproceedings{Heitzinger2016Julia,
author = {Clemens Heitzinger},
title = {Julia and partial differential equations: being faster than {M*TL*B}},
booktitle = {Proc. JuliaCon 2016},
address = {Boston, MA, USA},
key = {JuliaCon 2016},
pages = {\url{http://juliacon.org/abstracts.html#PDEs}},
month = {21--25 June},
year = 2016
}
@inproceedings{Heitzinger2016stochastic,
author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
title = {The stochastic drift-diffusion-{Poisson} system for modeling nanowire and nanopore sensors},
booktitle = {Proc. 19th European Conference on Mathematics for Industry (ECMI 2016)},
address = {Santiago de Compostela, Spain},
key = {ECMI 2016},
series = {Mathematics in Industry},
publisher = {Springer},
pages = {86},
month = {13--17 June},
year = 2016
}
@inproceedings{Heitzinger2016optimal,
author = {Clemens Heitzinger AND Caroline Geiersbach AND Leila Taghizadeh},
title = {Optimal numerical approaches to the stochastic homogenization of elliptic equations and to the stochastic drift-diffusion-{Poisson} system},
booktitle = {Proc. SIAM Conference on Mathematical Aspects of Materials Science (MS16)},
address = {Philadelpha, PA, USA},
key = {SIAM MS 2016},
pages = 136,
month = {8--12 May},
year = 2016
}
@inproceedings{Stadlbauer2016modeling,
author = {Benjamin Stadlbauer AND Andreas Buttinger-Kreuzhuber AND Gregor Mitscha-Eibl AND Clemens Heitzinger},
title = {Modeling the expected time to reach the recognition element in nanopore {DNA} sequencing},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
address = {Lausanne, Switzerland},
key = {SIAM UQ 2016},
pages = 4,
month = {5--8 April},
year = 2016
}
@inproceedings{Geiersbach2016Lausanne,
author = {Caroline Geiersbach AND Gerhard Tulzer AND Clemens Heitzinger},
title = {Optimal approach for the calculation of stochastically homogenized coefficients of elliptic {PDEs}},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
address = {Lausanne, Switzerland},
key = {SIAM UQ 2016},
pages = 124,
month = {5--8 April},
year = 2016
}
@inproceedings{Pammer2016non-intrusive,
author = {Gudmund Pammer AND Clemens Heitzinger},
title = {Non-intrusive stochastic {Galerkin} method for the stochastic nonlinear {Poisson-Boltzmann} equation},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
address = {Lausanne, Switzerland},
key = {SIAM UQ 2016},
pages = 9,
month = {5--8 April},
year = 2016
}
@inproceedings{Taghizadeh2016optimal,
author = {Leila Taghizadeh AND Clemens Heitzinger},
title = {Optimal method for calculating solutions of the stochastic drift-diffusion-{Poisson} system},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
address = {Lausanne, Switzerland},
key = {SIAM UQ 2016},
pages = 9,
month = {5--8 April},
year = 2016
}
@inproceedings{Taghizadeh2016stochastic,
author = {Leila Taghizadeh AND Amirreza Khodadadian AND Clemens Heitzinger},
title = {Stochastic modeling of dopant atoms in nanoscale transistors using multi-level {Monte Carlo}},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification 2016 (SIAM UQ16)},
address = {Lausanne, Switzerland},
key = {SIAM UQ 2016},
pages = 9,
month = {5--8 April},
year = 2016
}
@inproceedings{Taghizadeh2015optimal,
author = {Leila Taghizadeh AND Amirreza Khodadadian AND Caroline Geiersbach AND Clemens Heitzinger},
title = {Optimal multi-level {Monte-Carlo} method for a system of stochastic {PDEs}},
booktitle = {Proc. SIAM Conference on the Analysis of Partial Differential Equations (SIAM PD15)},
address = {Scottsdale, AZ, USA},
key = {SIAM PD 2015},
pages = {76-77},
month = {7--10 December},
year = 2015
}
@inproceedings{Taghizadeh2015approach,
author = {Leila Taghizadeh AND Caroline Geiersbach AND Clemens Heitzinger},
title = {Optimal approach for the numerical stochastic homogenization of elliptic problems},
booktitle = {Proc. SIAM Conference on Analysis of Partial Differential Equations (SIAM PD15)},
address = {Scottsdale, AZ, USA},
key = {SIAM PD 2015},
pages = {101-102},
month = {7--10 December},
year = 2015
}
@inproceedings{Heitzinger2015Taormina,
author = {Clemens Heitzinger AND Leila Taghizadeh},
title = {The stochastic drift-diffusion-{Poisson} system for modeling nanoscale devices and a multi-level {Monte-Carlo} method},
booktitle = {Proc. 24th International Conference on Transport Theory (ICTT 2015)},
address = {Taormina, Italy},
key = {ICTT 2015},
pages = {115-116},
month = {7--11 September},
year = 2015
}
@inproceedings{Taghizadeh2015Taormina,
author = {Clemens Heitzinger AND Leila Taghizadeh},
title = {Existence and uniqueness for the {Stokes}-{Nernst}-{Planck}-drift-diffusion-{Poisson} system for modeling nanowire sensors and nanopores},
booktitle = {Proc. 24th International Conference on Transport Theory (ICTT 2015)},
address = {Taormina, Italy},
key = {ICTT 2015},
pages = {117-118},
month = {7--11 September},
year = 2015
}
@inproceedings{Heitzinger2015Oxford,
author = {Clemens Heitzinger},
title = {Advances in numerical methods for stochastic partial differential equations and stochastic homogenization},
booktitle = {Proc. New Directions in Numerical Computation: In Celebration of Nick Trefethen's 60th Birthday},
address = {Oxford, UK},
key = {LNT60},
pages = {24-25},
month = {25--28 August},
year = 2015
}
@inproceedings{Khodadadian2015SanDiego,
author = {Amirreza Khodadadian AND Clemens Heitzinger},
title = {The signal-to-noise ratio due to biological noise in field-effect sensors calculated using the stochastic {Poisson} equation and polynomial-chaos expansion},
booktitle = {Proc. 13th US National Congress on Computational Mechanics (USNCCM)},
address = {San Diego, CA},
key = {USNCCM 2015},
pages = {501},
month = {26--30 July},
year = 2015
}
@inproceedings{Mitscha-Eibl2015SanDiego,
author = {Gregor Mitscha-Eibl AND Andreas Buttinger-Kreuzhuber AND Gerhard Tulzer AND Clemens Heitzinger},
title = {Nonlinear coupling of the drift-diffusion-{Poisson} and {Stokes} systems for nanopore simulations},
booktitle = {Proc. 13th US National Congress on Computational Mechanics},
address = {San Diego, CA},
key = {USNCCM 2015},
pages = {707},
month = {26--30 July},
year = 2015
}
@inproceedings{Khodadadian2015Cachan,
author = {Amirreza Khodadadian AND Clemens Heitzinger},
title = {Ionic currents through transmembrane proteins calculated by a transport equation for confined structures},
booktitle = {Proc. 4th International Conference on Computational and Mathematical Biomedical Engineering (CMBE 2015)},
address = {Cachan, France},
key = {CMBE 2015},
pages = {460-463},
month = {29~June -- 1~July},
year = 2015
}
@inproceedings{Tulzer2015noise,
author = {Gerhard Tulzer AND Clemens Heitzinger},
title = {Noise and Fluctuations in Nanowire Biosensors},
booktitle = {Proc. 8th Vienna International Conference on Mathematical Modelling (MATHMOD 2015)},
address = {Vienna, Austria},
key = {MATHMOD 2015},
pages = {761-765},
month = {18--20 February},
year = 2015,
pdf = {Papers/Tulzer2015noise.pdf}
}
@inproceedings{Heitzinger2014Julia,
author = {Clemens Heitzinger AND Gerhard Tulzer},
title = {{Julia} and the numerical homogenization of {PDEs}},
booktitle = {Proceedings of the First Workshop for High Performance Technical Computing in Dynamic Languages (HPTCDL 2014)},
address = {New Orleans, LA},
key = {HPTCDL 2014},
pages = {36-40},
month = {17 November},
year = 2014,
publisher = {IEEE Press},
isbn = {978-1-4799-7020-9},
url = {http://dx.doi.org/10.1109/HPTCDL.2014.8},
doi = {10.1109/HPTCDL.2014.8}
}
@inproceedings{Khodadadian2014Barcelona,
author = {Amirreza Khodadadian AND Clemens Heitzinger},
title = {Using the stochastic {Poisson}-{Boltzmann} equation to quantify noise in nanowire bio- and gas sensors},
booktitle = {Proc. 11th World Congress on Computational Mechanics (WCCM XI)},
address = {Barcelona, Spain},
key = {WCCM XI},
pages = {A4187/1--2},
month = {20--25 July},
year = 2014
}
@inproceedings{Heitzinger2014transport,
author = {Clemens Heitzinger AND Christian Ringhofer},
title = {Transport in confined structures as a multiscale problem and numerical results for nanopores},
booktitle = {Proc. SIAM Annual Meeting 2014},
address = {Chicago, IL, USA},
key = {SIAM AN14},
pages = 6,
month = {7--11 July},
year = 2014
}
@inproceedings{Tulzer2014various,
author = {Clemens Heitzinger AND Gerhard Tulzer},
title = {Various strategies for the numerical stochastic homogenization of the stochastic {Poisson} and {Helmholtz} equations},
booktitle = {Proc. SIAM Annual Meeting 2014},
address = {Chicago, IL, USA},
key = {SIAM AN14},
pages = 15,
month = {7--11 July},
year = 2014
}
@inproceedings{Heitzinger2014OWR,
author = {Clemens Heitzinger},
title = {Transport through confined structures as a multiscale problem},
booktitle = {Oberwolfach Reports},
series = {volume~11},
number = 2,
pages = {1650-1653},
year = 2014,
doi = {10.4171/OWR/2014/30}
}
@inproceedings{Heitzinger2014stochastic,
author = {Clemens Heitzinger},
title = {The stochastic {Poisson} and {Poisson}-{Boltzmann} equations applied to quantifying noise and fluctuations in nanoscale sensors},
booktitle = {Proc. 18th European Conference on Mathematics for Industry (ECMI 2014)},
address = {Taormina, Italy},
key = {ECMI 2014},
pages = {150-151},
month = {9--13 June},
year = 2014
}
@inproceedings{Tulzer2014Monte-Carlo,
author = {Gerhard Tulzer AND Clemens Heitzinger},
title = {{Monte}-{Carlo} and Quasi-{Monte}-{Carlo} approaches for the numerical stochastic homogenization of elliptic partial differential equations},
booktitle = {Proc. 11th International Conference on Monte Carlo and Quasi-Monte Carlo Methods in Scientific Computing (MCQMC2014)},
address = {Leuven, Belgium},
key = {MCQMC 2014},
pages = {168},
month = {6--11 April},
year = 2014
}
@inproceedings{Khodadadian2014quasi-Monte-Carlo,
author = {Amirreza Khodadadian AND Clemens Heitzinger},
title = {Quasi-{Monte}-{Carlo} methods for the linear and nonlinear stochastic {Poisson}-{Boltzmann} equations},
booktitle = {Proc. 11th International Conference on Monte Carlo and Quasi-Monte Carlo Methods in Scientific Computing (MCQMC2014)},
address = {Leuven, Belgium},
key = {MCQMC 2014},
pages = {167},
month = {6--11 April},
year = 2014
}
@inproceedings{Heitzinger2014uncertainty,
author = {Clemens Heitzinger AND Amirreza Khodadadian},
title = {Uncertainty quantification in nanowire sensors using the stochastic nonlinear {Poisson}-{Boltzmann} equation},
booktitle = {Proc. SIAM Conference on Uncertainty Quantification (SIAM UQ14)},
address = {Savannah, Georgia, USA},
key = {SIAM UQ14},
pages = {87},
month = {31 March -- 3~April},
year = 2014
}
@inproceedings{Tulzer2013noise-level,
author = {Gerhard Tulzer AND Stephan Steinhauer AND Elise Brunet AND Giorgio Mutinati AND Anton Köck AND Clemens Heitzinger},
title = {Noise-Level Analysis of Metal-Oxide Nanowire Gas-Sensor Signals for Selective Gas Detection},
booktitle = {Proc. International Conference on One-Dimensional Nanomaterials (ICON 2013)},
key = {ICON 2013},
pages = 161,
address = {Annecy, France},
month = {23--26 September},
year = 2013
}
@inproceedings{Khodadadian2013simulation,
author = {Amirreza Khodadadian AND Clemens Heitzinger},
title = {Simulation of Nanowire Sensors using the Stochastic {Poisson}-{Boltzmann} Equation},
booktitle = {Proc. 2nd International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE 2013)},
pages = {19-20},
address = {Prague, Czech Republic},
key = {IC-MSQUARE 2013},
month = {1--5 September},
year = 2013
}
@inproceedings{Heitzinger2013OWR,
author = {Clemens Heitzinger},
title = {Deterministic and stochastic homogenization problems with new applications in nanotechnology},
booktitle = {Oberwolfach Reports},
series = {volume~10},
number = 1,
pages = {823-826},
year = 2013,
doi = {10.4171/OWR/2013/14}
}
@inproceedings{Tulzer2013Biodevices,
author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
title = {Modeling {$H_2$} Adsorption Processes at {SnO$_2$} Nanowire Surfaces: Parameter Estimation and Simulation},
booktitle = {Proc. 6th International Conference on Biomedical Electronics and Devices (BIODEVICES 2013)},
pages = {265-268},
address = {Barcelona, Spain},
key = {BIODEVICES 2013},
month = {11--14 February},
year = 2013,
pdf = {Papers/Tulzer2013modeling.pdf}
}
@inproceedings{Tulzer2012SIWAN,
author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
title = {Characteristics of {CO} and {H$_2$} detection with single nanowire gas sensors},
booktitle = {Proc. 5th Szeged International Workshop on Advances in Nanoscience 2012 (SIWAN 2012)},
pages = {36-37},
address = {Szeged, Hungary},
key = {SIWAN2012},
month = {24--27 October},
year = 2012
}
@inproceedings{Tulzer2012Eurosensors,
author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio C. Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
title = {Inverse modeling of {CO} reactions at {SnO$_2$} nanowire surfaces for selective detection},
booktitle = {Proc. Eurosensors {XXVI} 2012},
address = {Krakow, Poland},
key = {Eurosensors 2012},
pages = {W2C-4/1--4},
month = {9--12 September},
year = 2012,
note = {(Most prestigious European sensors conference.)}
}
@inproceedings{Baumgartner2012CMAM,
author = {Stefan Baumgartner AND Clemens Heitzinger},
title = {Modeling and Simulation of Nanowire Field-Effect Transistors},
booktitle = {Proc. Computational Methods in Applied Mathematics (CMAM 2012)},
address = {Berlin, Germany},
key = {CMAM 2012},
pages = {12-13},
month = {30 July -- 3~August},
year = 2012
}
@inproceedings{Tulzer2012CMAM,
author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
title = {Inverse modeling of {CO} adsorption processes at semiconductor nanowire surfaces for selective gas detection},
booktitle = {Proc. Computational Methods in Applied Mathematics (CMAM 2012)},
address = {Berlin, Germany},
key = {CMAM 2012},
pages = {54-55},
month = {30 July -- 3~August},
year = 2012
}
@inproceedings{Tulzer2012calculation,
author = {Gerhard Tulzer AND Stefan Baumgartner AND Elise Brunet AND Giorgio C. Mutinati AND Stephan Steinhauer AND Anton Köck AND Clemens Heitzinger},
title = {Calculation of gas surface-reaction parameters at {SnO$_2$} nanowire surfaces},
booktitle = {Proc. 9th International Conference on Nanosciences and Nanotechnologies (NN12)},
address = {Thessaloniki, Greece},
key = {NN12},
pages = 59,
month = {3--6 July},
year = 2012
}
@inproceedings{Baumgartner2012parallel,
author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
title = {Parallel simulation of nanowire field-effect transistors},
booktitle = {Proc. 15th International Workshop on Computational Electronics (IWCE 15)},
address = {Madison, WI},
key = {IWCE 15},
pages = {245-246},
month = may,
year = 2012
}
@inproceedings{Brunet2012fabrication,
author = {Elise Brunet AND Gerhard Tulzer AND Stephan Steinhauer AND Giorgio Mutinati AND Anton Köck AND Martin Vasicek AND Clemens Heitzinger},
title = {Fabrication and simulation of {SnO$_2$} nanowire gas sensors},
booktitle = {Proc. 3rd International Congress on Nanotechnology in Medicine and Biology (BioNanoMed 2012)},
address = {Krems, Austria},
key = {BioNanoMed 2012},
month = mar,
year = 2012,
pages = {8}
}
@inproceedings{Baumgartner2012self-consistent,
author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
title = {Self-consistent simulation of nanowire field-effect biosensors},
booktitle = {Proc. 3rd International Congress on Nanotechnology in Medicine and Biology (BioNanoMed 2012)},
address = {Krems, Austria},
key = {BioNanoMed 2012},
month = mar,
year = 2012,
pages = {C6}
}
@inproceedings{Baumgartner2012advanced,
author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
title = {Advanced Modeling and Simulation of Nanowire Field-Effect Sensors},
booktitle = {Proc. 7th Vienna International Conference on Mathematical Modelling (MATHMOD 2012)},
address = {Vienna, Austria},
key = {MATHMOD 2012},
pages = {240-245},
month = feb,
year = 2012,
url = {http://www.ifac-papersonline.net/Detailed/58599.html},
doi = {10.3182/20120215-3-AT-3016.00042},
pdf = {Papers/baumgartner2012advanced.pdf},
abstract = {A 3d simulator for nanowire field-effect sensors and
transistors including fast varying charge
concentrations at an interface is presented. This
simulator is based on a system of partial
differential equations calculating the electrostatic
potential of the whole device and the charge
concentrations in the semiconducting
nanowire. Therefore, three domains need to be
modeled. The nanowire is described by the
drift-diffusion-Poisson system, the
Poisson-Boltzmann equation is used for the
simulation of an aqueous solution, and the Poisson
equation holds in the remaining oxide. Such devices
can be used as gas sensors, and by functionalization
of the nanowire surface, i.e., by attaching probe
molecules, they can also be used for the detection
of biomolecules in aqueous solutions. Binding of
target molecules to the surface induces a field
effect due to changes of charges in a small layer
around the surface. This effect is responsible for
the sensor response and hence is of paramount
importance. A homogenization method resulting in two
jump conditions is implemented which splits the
computation into the charge of the boundary layer
and into the remaining device. In order to take into
account the geometry of the devices, 3d simulations
are necessary and hence a parallelization technique
has been developed. To include the jump conditions
of the homogenization method, a novel finite-element
tearing and interconnecting (FETI) method has been
developed. With this simulator it is possible to
solve the three dimensional and heterogeneous system
of partial differential equations with
discontinuities in feasible time using realizable
computer power. As a result, sensitivity in terms of
geometrical and physical properties can be predicted
and sensors can be improved.}
}
@inproceedings{Baumgartner2011eurosensors,
author = {Stefan Baumgartner AND Martin Vasicek AND Clemens Heitzinger},
title = {Analysis of Field-Effect Biosensors Using Self-Consistent {3D} Drift-Diffusion and {Monte-Carlo} Simulations},
booktitle = {Proc. Eurosensors {XXV} 2011},
address = {Athens, Greece},
key = {Eurosensors 2011},
pages = {1275/1-4},
month = sep,
year = 2011,
pdf = {Papers/Poster - Eurosensors 2011.pdf},
note = {(Most prestigious European sensors conference.)}
}
@inproceedings{Baumgartner2011design,
author = {Stefan Baumgartner AND Martin Vasicek AND Alena Bulyha AND Nathalie Tassotti AND Clemens Heitzinger},
title = {Design Investigations of Nanowire Field-Effect Biosensors using Self-Consistent 3D Drift-Diffusion and {Monte-Carlo} Simulations},
booktitle = {Proc. 8th International Conference on Nanosciences and Nanotechnologies (NN11)},
address = {Thessaloniki, Greece},
key = {NN11},
pages = 88,
month = jul,
year = 2011,
pdf = {Papers/baumgartner2011design.pdf}
}
@inproceedings{Windbacher2010biotin,
author = {Thomas Windbacher AND Viktor Sverdlov AND Siegfried Selberherr AND Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer},
title = {Simulation of Field-Effect Biosensors ({BioFETs}) for Biotin-Streptavidin Complexes},
booktitle = {AIP Conf. Proc. (Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors)},
volume = 1199,
pages = {507-508},
month = jan,
year = 2010,
isbn = {},
publisher = {AIP},
url = {http://link.aip.org/link/?APCPCS/1199/507/1},
pdf = {http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS001199000001000507000001&idtype=cvips&prog=search},
doi = {10.1063/1.3295530},
abstract = {Biologically sensitive field-effect transistors (BioFETs)
are a promising technology for detecting pathogens,
antigen-antibody complexes, and tumor markers. A
BioFET is studied for a biotin-streptavidin
complex. Biotin-streptavidin is used in detection
and purification of various biomolecules. The link
between the Angstrom scale of the chemical reaction
and the micrometer scale of the field effect device
is realized by homogenized interface conditions.}
}
@inproceedings{Heitzinger2009modeling,
author = {Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer AND Yang Liu AND Robert W. Dutton},
title = {Modeling and Simulation of Orientation-Dependent Fluctuations in Nanowire Field-Effect Biosensors Using the Stochastic Linearized {Poisson}--{Boltzmann} Equation},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2009)},
address = {San Diego, CA, USA},
key = {SISPAD 2009},
pages = {86-90},
year = 2009,
month = sep,
isbn = {978-1-4244-3947-8},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=5290244&isnumber=5290184&punumber=5290183&k2dockey=5290244@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Eau+%29&pos=7&access=no},
pdf = {http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5290244&isnumber=5290184},
doi = {10.1109/SISPAD.2009.5290244},
abstract = {We use the stochastic linearized Poisson-Boltzmann equation
to model the fluctuations in nanowire field-effect
biosensors due to changes in the orientation of the
biomolecules. Different orientations of the
biomolecules with respect to the sensor surface due
to Brownian motion have different probabilities.
The probabilities of the orientations are calculated
from their electrostatic free energy. The structure
considered here is a cross section through a
rectangular silicon nanowire lying on a an oxide
surface with a back-gate contact. The oxide surface
of the nanowire is functionalized by biomolecules in
an electrolyte with an electrode. Various
combinations of PNA (peptide nucleic acid),
single-stranded DNA, and double-stranded DNA are
simulated to discuss the various states of a DNA
sensor. A charge-transport models yields the
current through the transducer that compares well
with measurements.},
note = {(Acceptance rate 57\%.)}
}
@inproceedings{Punzet2009quantitative,
author = {M. Punzet AND H. Karlic AND F. Varga AND C. Heitzinger AND D. Baurecht},
title = {Quantitative evaluation of surface modifications used for {BioFET}s by {FTIR}-{ATR} spectroscopy},
booktitle = {Proc. 4th International Workshop on Vibrational Spectroscopy of Thin Films},
address = {Potsdam, Germany},
pages = {},
year = 2009,
month = {3--5 June},
isbn = {}
}
@inproceedings{Windbacher2009study,
author = {Thomas Windbacher AND Viktor Sverdlov AND Siegfried Selberherr AND Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer},
title = {Study of the Properties of Biotin-Streptavidin Sensitive {BioFET}s},
booktitle = {Proc. International Conference on Biomedical Electronics and Devices (BIODEVICES 2009)},
address = {Porto, Portugal},
pages = {24-30},
year = 2009,
month = jan,
isbn = {},
url = {},
pdf = {Papers/windbacher2009study.pdf},
abstract = {In this work the properties of a biotin-streptavidin BioFET
have been studied numerically with homogenized
boundary interface conditions as the link between
the oxide of the FET and the analyte which contains
the bio-sample. The biotin-streptavidin reaction
pair is used in purification and detection of
various biomolecules; the strong streptavidin-biotin
bond can also be used to attach biomolecules to one
another or onto a solid support. Thus this reaction
pair in combination with a FET as the transducer is
a powerful setup enabling the detection of a wide
variety of molecules with many advantages that stem
from the FET, like no labeling, no need of expensive
read-out devices, the possibility to put the signal
amplification and analysis on the same chip, and
outdoor usage without the necessity of a lab.}
}
@inproceedings{Liu2008overcoming,
author = {Yang Liu AND Klas Lilja AND Clemens Heitzinger AND Robert W. Dutton},
title = {Overcoming the Screening-Induced Performance Limits of Nanowire Biosensors: a Simulation Study on the Effect of Electro-Diffusion Flow},
booktitle = {IEDM 2008 Technical Digest},
address = {San Francisco, CA, USA},
key = {IEDM 2008},
pages = {491-494},
year = 2008,
month = dec,
isbn = {1-4244-2377-4},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=4796733&isnumber=4796592&punumber=4786613&k2dockey=4796733@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Eau+%29&pos=8&access=no},
pdf = {http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4796733&isnumber=4796592},
doi = {10.1109/IEDM.2008.4796733},
abstract = {Device-level simulation capabilities have been developed to
self-consistently model the Si-nanowire (NW)
biosensor systems. Our numerical study demonstrates
that by introducing electro-diffusion current flow
in the electrolyte solutions, the electrostatic
screening of the biological charge can be
significantly suppressed; an improvement of the
sensed signal strength by more than approximately 10
times is indicated. Based on such an operation
principle, the screening-induced performance limits
on Si-NW biosensors can be overcome.},
note = {(Most prestigious electron-devices conference; acceptance rate $\approx$33\%.)}
}
@inproceedings{Windbacher2008simulation,
author = {Thomas Windbacher AND Viktor Sverdlov AND Siegfried Selberherr AND Clemens Heitzinger AND Norbert Mauser AND Christian Ringhofer},
title = {Simulation of Field-Effect Biosensors ({BioFETs})},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2008)},
address = {Hakone, Japan},
key = {SISPAD 2008},
pages = {193-196},
year = 2008,
month = sep,
isbn = {978-1-4244-1753-7},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=4648270&isnumber=4648212&punumber=4636077&k2dockey=4648270@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Eau+%29&pos=9&access=no},
pdf = {http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4648270&isnumber=4648212},
doi = {10.1109/SISPAD.2008.4648270},
abstract = {In this paper a bottom-up approach for modeling field-effect
Biosensors (BioFETs) is developed. Starting from the
given positions of charged atoms, of a given
molecule, the charge and the dipole moment of a
single molecule are calculated. This charge and
dipole moment are used to calculate the mean surface
density and mean dipole moment at the
biofunctionalized surface, which are introduced into
homogenized interface conditions linking the
Angstrom-scale of the molecule with the
micrometer-scale of the FET. By considering a
single-stranded to double-stranded DNA reaction, we
demonstrate the capability of a BioFET to detect a
certain DNA and to resolve the DNA orientation.},
note = {(Acceptance rate 70\%.)}
}
@inproceedings{Ertl2007efficient,
author = {Otmar Ertl AND Clemens Heitzinger AND Siegfried Selberherr},
title = {Efficient Coupling of {Monte-Carlo} and Level-Set Methods for Topography Simulation},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2007)},
address = {Vienna, Austria},
key = {SISPAD 2007},
pages = {417-420},
year = 2007,
month = sep,
isbn = {978-3-211-72860-4},
url = {},
pdf = {},
abstract = {We have developed a topography simulation method which
combines advanced level-set techniques for surface
evolution with Monte Carlo flux calculation. The
result is an algorithm with an overall complexity
and storage requirement scaling like $O(N \log N)$
with surface disretization. The calculation of
particle trajectories is highly optimized, since
spatial partitioning is used to accelerate ray
tracing. The method is demonstrated on Si etching in
SF$_6$/O$_2$ plasma.},
note = {(Acceptance rate 55\%.)}
}
@inproceedings{Damodaran2007investigation,
author = {Sriraman Damodaran AND Selvakumaran Vadivelmurugan AND Quoc-Thai Do AND Clemens Heitzinger AND Yang Liu AND Robert Dutton AND Gerhard Klimeck},
title = {Investigation of the Conductance of Silicon Nanowire Biosensors using the {2D} Drift-Diffusion Model},
booktitle = {Proc. 10th NSTI Nanotech Conference 2007 (NSTI Nanotech 2007)},
address = {Santa Clara, CA, USA},
key = {NSTI Nanotech 2007},
pages = {1374/1-3},
month = may,
year = 2007,
pdf = {Papers/damodaran2007investigation.pdf},
abstract = {Experiments for silicon biosensors with gate lengths in the
range of 200nm to 500nm have not been extensively
carried out. In this paper, simulations were
performed for gate lengths proportionally smaller
and greater than regular experimental gate lengths.
The sensitivity of the biosensors was simulated
using a 2D drift-diffusion model in cylindrical
coordinates using the Prophet simulator. In this
study simulated conductance results and the
respective experimental values are compared. The
good agreement between simulation and experiment
enables us to predict and optimize the sensitivity
of the DNA sensors.
The sensitivity was studied in
terms of conductance by varying the gate length,
probe spacing, binding efficiency and angle of probe
from normal.}
}
@inproceedings{Ahmed2007symmetry,
author = {Shaikh Ahmed AND Muhammad Usman AND Clemens Heitzinger AND Rajib Rahman AND Andrei Schliwa AND Gerhard Klimeck},
title = {Symmetry Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field},
booktitle = {AIP Conf. Proc.},
volume = 893,
pages = {849-850},
month = apr,
year = 2007,
issn = {0094243X},
publisher = {AIP},
doi = {10.1063/1.2730157},
url = {http://link.aip.org/link/?APCPCS/893/849/1},
pdf = {http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000849000001&idtype=cvips&prog=normal},
abstract = {Electrons and holes captured in self-assembled quantum dots
(QDs) are subject to symmetry breaking that cannot
be represented in with continuum material
representations. Atomistic calculations reveal
symmetry lowering due to effects of strain and
piezo-electric fields. These effects are
fundamentally based on the crystal topology in the
quantum dots. This work studies these two competing
effects and demonstrates the fine structure
splitting that has been demonstrated experimentally
can be attributed to the underlying atomistic
structure of the quantum dots.}
}
@inproceedings{Usman2007strain,
author = {Muhammad Usman AND Shaikh Ahmed AND Marek Korkusinski AND Clemens Heitzinger AND Gerhard Klimeck},
title = {Strain and Electronic Structure Interactions in Realistically Scaled Quantum Dot Stacks},
booktitle = {AIP Conf. Proc.},
volume = 893,
pages = {847-848},
month = apr,
year = 2007,
issn = {0094243X},
publisher = {AIP},
doi = {10.1063/1.2730156},
url = {http://link.aip.org/link/?APCPCS/893/847/1},
pdf = {http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000847000001&idtype=cvips&ident=freesearch&prog=search},
abstract = {Self-assembled quantum dots (DQ) can be grown as stacks
where the QD distance can be controlled with atomic
layer control. This distance determines the
interaction of the artificial atom states to form
artificial molecules. The design of QD stacks
becomes complicated since the structures are subject
to inhomogeneous, long-range strain and growth
imperfections such as non-identical dots and
inter-diffused interfaces. This study presents
simulations of stacks consistent of three QDs in
their resulting inhomogeneous strain field. The
simulations are performed with NEMO 3-D which uses
the valence force field method to compute the strain
and the empirical sp3d5s* tight binding method to
compute the electronic structure. Strain is shown to
provide a very interesting mixing between states and
preferred ordering of the ground state in the
top-most or bottom most quantum dot subject to
growth asymmetries.}
}
@inproceedings{Heitzinger2006investigation,
author = {Clemens Heitzinger AND Gerhard Klimeck},
title = {Investigation of Conventional {DNAFET}s for Genome-wide Detection of Polymorphisms},
booktitle = {Proc. Eurosensors {XX} 2006},
address = {Göteborg, Sweden},
key = {Eurosensors 2006},
volume = 1,
pages = {448-449},
month = sep,
year = 2006,
isbn = {91-631-9280-2},
pdf = {Papers/heitzinger2006investigation.pdf},
abstract = {Conventional SOI DNAFET devices, being able to detect
single-nucleotide polymor phisms, are simulated in a
comprehensive approach. These devices can be
fabricated in high-density arrays and offer
advantages compared to optical detection
methods. The influence of device parameters like
doping concentration and the size of the exposed
sensor area is investigated.}
}
@inproceedings{Klimeck2006nemo3d,
author = {Gerhard Klimeck AND Michael McLennan AND Matteo Mannino AND Marek Korkusinski AND Clemens Heitzinger AND Rick Kennell AND Steven Clark},
title = {{NEMO 3-D} and {nanoHUB}: Bridging Research and Education},
booktitle = {Proc. 6th IEEE Conference on Nanotechnology (IEEE-NANO 2006)},
address = {Cincinnati, OH, USA},
key = {IEEE-NANO 2006},
volume = 2,
pages = {441-444},
month = jun,
year = 2006,
isbn = {},
publisher = {IEEE},
url = {http://ieeexplore.ieee.org/search/freesrchabstract.jsp?arnumber=1717132&isnumber=36119&punumber=11219&k2dockey=1717132@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=7},
pdf = {http://ieeexplore.ieee.org/iel5/11219/36119/01717132.pdf?tp=&isnumber=36119&arnumber=1717132&punumber=11219},
abstract = {The 3-D Nanoelectronic Modeling Tool (NEMO 3-D) is an
electronic structure simulation code for the
analysis of quantum dots, quantum wells, nanowires,
and impurities. NEMO 3-D uses the Valence Force
Field (VFF) method for strain and the empirical
tight binding (ETB) for the electronic structure
calculations. Various ETB models are available,
ranging from single s orbitals (single band
effective mass), over sp$^3$s* to sp$^3$d$^5$s*
models, with and without explicit representation of
spin. The code is highly optimized for operation on
cluster computing systems. Simulations of systems of
64 million atoms (strain) and 21 million atoms have
been demonstrated. This implies that every atom is
accounted for in simulation volumes of (110nm)$^3$
and (77nm)$^3$, respectively. Such simulations
require parallel execution on 64 itanium2 CPUs for
around 12 hours. A simple effective mass calculation
of an isolated quantum dot, in contrast, requires
about 20 seconds on a single CPU. NEMO 3-D therefore
offers the opportunity to engage both educators and
advanced researchers, utilizing a single
code. nanoHUB.org is the community web site hosted
by the Network for Computational Nanotechnology
(NCN) dedicated to bridge education, research, and
development for the whole nanoscience and
nanotechnology community. This paper reviews the
mission of the NCN exemplified by the development
and deployment of the NEMO 3-D tool.}
}
@inproceedings{Sheikholeslami2005applications,
author = {Alireza Sheikholeslami AND Farnaz Parhami AND Rene Heinzl AND Elaf Al-Ani AND Clemens Heitzinger AND Fuad Badrieh AND Helmut Puchner AND Tibor Grasser AND Siegfried Selberherr},
title = {Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2005)},
address = {Tokyo, Japan},
key = {SISPAD 2005},
pages = {187-190},
year = 2005,
month = sep,
isbn = {4-9902762-0-5},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1562056&isnumber=33165&punumber=10443&k2dockey=1562056@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=9},
pdf = {http://ieeexplore.ieee.org/iel5/10443/33165/01562056.pdf?tp=&isnumber=33165&arnumber=1562056&punumber=10443},
abstract = {We present an analysis of deposition of silicon nitride and
silicon dioxide layers into three-dimensional
interconnect structures. The investigations have
been performed using our general purpose topography
simulator ELSA (Enhanced Level Set Applications). We
predict void formation and its characteristics,
which play an important role for the formation of
cracks which are observed during the passivation of
layers covering IC chips.},
note = {(Acceptance rate 57\%.)}
}
@inproceedings{Sheikholeslami2005inverse,
author = {Alireza Sheikholeslami AND Stefan Holzer AND Clemens Heitzinger AND Markus Leicht AND Oliver Häberlen AND Josef Fugger AND Tibor Grasser AND Siegfried Selberherr},
title = {Inverse Modeling of Oxid Deposition Using Measurements of a {TEOS} {CVD} Process},
booktitle = {Proc. PhD Research in Microelectronics and Electronics 2005},
address = {Lausanne, Switzerland},
volume = 2,
pages = {79-82},
month = jul,
year = 2005,
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1542941&isnumber=32955&punumber=10358&k2dockey=1542941@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=8},
pdf = {http://ieeexplore.ieee.org/iel5/10358/32955/01542941.pdf?tp=&isnumber=32955&arnumber=1542941&punumber=10358},
doi = {10.1109/RME.2005.1542941},
abstract = {The goal of this paper is to identify simulation models for
the deposition of silicon dioxide layers from TEOS
(tetraethoxysilane) in a CVD (chemical vapor
deposition) process and to calibrate the parameters
of these models by comparing simulation results to
SEM (scanning electron microscope) images of
deposited layers in trenches with different aspect
ratios. We describe the three models used and the
parameters which lead to the best results for each
model which allows us to draw conclusions on the
usefulness of the models.}
}
@inproceedings{Heitzinger2004simulation,
author = {Clemens Heitzinger AND Christian Ringhofer AND Shaikh Ahmed AND Dragica Vasileska},
title = {Efficient Simulation of the Full {Coulomb} Interaction in Three Dimensions},
booktitle = {Proc. 10th International Workshop on Computational Electronics (IWCE 10)},
address = {West Lafayette, IN, USA},
key = {IWCE 10},
pages = {24-25},
month = oct,
year = 2004,
isbn = {},
publisher = {IEEE},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1407300&isnumber=30514&punumber=9657&k2dockey=1407300@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=12},
pdf = {http://ieeexplore.ieee.org/iel5/9657/30514/01407300.pdf?tp=&isnumber=30514&arnumber=1407300&punumber=9657},
doi = {10.1109/IWCE.2004.1407300},
abstract = {The continued scaling of MOSFETs into the nano-scale regime
requires refined models for carrier transport due
to, e.g., unintentional doping in the active channel
region which gives rise to threshold voltage and
on-state current fluctuations. Therefore every
transport simulator which is supposed to accurately
simulate nano-devices must have a proper model for
the inclusion of the Coulomb interactions. This
paper proposes to use a 3D FMM (fast multi-pole
method) (Greengard and Rokhlin, 1997; Cheng et al.,
1999). The FMM is based on the idea of condensing
the information of the potential generated by point
sources in series expansions. After calculating
expansions in a hierarchical manner, the long-range
part of the potential is obtained by evaluating the
series at the point in question and the short-range
part is calculated by direct summation. Its
computational effort is only O(n) where n is the
number of particles. In summary, the use of the FMM
approach for semiconductor transport simulations was
validated. Simulation times are decreased
significantly and effects due to electron-electron
and electron-impurity interactions are observed as
expected. Since the FMM algorithm operates
independently of the grid used in the MC simulation,
it can be easily included into existing MC device
simulation codes.}
}
@inproceedings{Sheikholeslami2004three-dimensional,
author = {Alireza Sheikholeslami AND Clemens Heitzinger AND Tibor Grasser AND Siegfried Selberherr},
title = {Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method},
booktitle = {Proc. 24th IEEE International Conference on Microelectronics (MIEL 2004)},
address = {Niš, Yugoslavia},
key = {MIEL 2004},
volume = 1,
pages = {241-244},
year = 2004,
month = may,
isbn = {0-7803-8166-1},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1314606&isnumber=29143&punumber=9193&k2dockey=1314606@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=13},
pdf = {http://ieeexplore.ieee.org/iel5/9193/29143/01314606.pdf?tp=&isnumber=29143&arnumber=1314606&punumber=9193},
abstract = {We present the application of level set and fast marching
methods to the simulation of surface topography of a
wafer in three dimensions for deposition and etching
processes. These simulations rest on many
techniques, including a narrow band level set
method, fast marching for the eikonal equation,
extension of the speed function, transport models,
visibility determination, and an iterative equation
solver.}
}
@inproceedings{Heitzinger2004study,
author = {Clemens Heitzinger AND Alireza Sheikholeslami AND Josef Fugger AND Oliver Häber\-len AND Markus Leicht AND Siegfried Selberherr},
title = {A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm},
booktitle = {Proc. 205th Meeting of the Electrochemical Society (ECS), Electrochemical Processes in {ULSI} and {MEMS}},
editor = {H. Deligianni AND S.T. Mayer AND T.P. Moffat AND G.R. Stafford},
address = {San Antonio, TX, USA},
key = {205th Meeting of the ECS},
volume = {PV 2004-17},
pages = {132-142},
month = may,
year = 2004,
isbn = {1-56677-472-1},
publisher = {The Electrochemical Society},
pdf = {Papers/heitzinger2004study.pdf},
abstract = {The aim of this work is to study the etching of trenches in
silicon and the generation of voids during the
filling of genuinely three-dimensional trench
structures with silicon dioxide or nitride. The
trenches studied are part of the manufacturing
process of power MOSFETs, where void-less filling
must be achieved. Another area of applications is
capacitance extraction in interconnect structures,
where the deliberate inclusion of voids serves the
purpose of reducing overall capacitance.
Furthermore, these simulations make it possible to
analyze the variations on the feature scale
depending on the position of the single trench on
the wafer and in the reactor.}
}
@inproceedings{Minixhofer2003optimization,
author = {Rainer Minixhofer AND Stefan Holzer AND Clemens Heitzinger AND Johannes Fellner AND Tibor Grasser AND Siegfried Selberherr},
title = {Optimization of Electrothermal Material Parameters Using Inverse Modeling},
booktitle = {Proc. 33rd European Solid-State Device Research Conference (ESSDERC 2003)},
editor = {José Franca AND Paulo Freitas},
address = {Estoril, Portugal},
key = {ESSDERC 2003},
pages = {363-366},
year = 2003,
month = sep,
isbn = {0-7803-7999-3},
publisher = {IEEE},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1256889&isnumber=28111&punumber=8890&k2dockey=1256889@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=16},
pdf = {http://ieeexplore.ieee.org/iel5/8890/28111/01256889.pdf?tp=&isnumber=28111&arnumber=1256889&punumber=8890},
doi = {10.1109/ESSDERC.2003.1256889},
abstract = {A method for determining higher order thermal coefficients
for electrical and thermal properties of metallic
interconnect materials used in semiconductor
fabrication is presented. By applying inverse
modeling on transient electrothermal
three-dimensional finite element simulations the
measurements of resistance over time of Polysilicon
fuse structures can be matched. This method is
intended to be applied to the optimization of
Polysilicon fuses for reliability and speed.}
}
@inproceedings{Badrieh2003feature,
author = {Fuad Badrieh AND Helmut Puchner AND Alireza Sheikholeslami AND Clemens Heitzinger AND Siegfried Selberherr},
title = {From Feature Scale Simulation to Backend Simulation for a 100nm {CMOS} Process},
booktitle = {Proc. 33rd European Solid-State Device Research Conference (ESSDERC 2003)},
editor = {José Franca AND Paulo Freitas},
address = {Estoril, Portugal},
key = {ESSDERC 2003},
pages = {441-444},
year = 2003,
month = sep,
isbn = {0-7803-7999-3},
publisher = {IEEE},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1256908&isnumber=28111&punumber=8890&k2dockey=1256908@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=15},
pdf = {http://ieeexplore.ieee.org/iel5/8890/28111/01256908.pdf?tp=&isnumber=28111&arnumber=1256908&punumber=8890},
doi = {10.1109/ESSDERC.2003.1256908},
abstract = {The current challenge for TCAD is the prediction of the
performance of groups of devices, backends, and --
generally speaking -- large parts of the final IC in
contrast to the simulation of single devices and
their fabrication. This enables one to predictively
simulate the performance of the final device
depending on different process technologies and
parameters, which the simulation of single devices
cannot achieve.
In this paper we focus on the
simulation of backend, interconnect capacitance, and
time delays. To that end topography simulations of
deposition, etching, and CMP processes in the
various metal lines are used to build up the backend
stack. The output of the feature scale simulations
is used as input to a capacitance extraction tool,
whose results are made available directly to the
circuit designer.
We discuss the utilized simulation
tools and their integration. The topography
simulations were performed by our tool called ELSA
(enhanced level set applications) and the subsequent
simulations by RAPHAEL. Finally simulation results
for a 100nm process are presented, where the
influence of void formation between metal lines
profoundly impacts the performance of the whole
interconnect stack.}
}
@inproceedings{Heitzinger2003method,
author = {Clemens Heitzinger AND Alireza Sheikholeslami AND Jong-Mun Park AND Siegfried Selberherr},
title = {A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate {MOSFET}},
booktitle = {Proc. 33rd European Solid-State Device Research Conference (ESSDERC 2003)},
editor = {José Franca AND Paulo Freitas},
address = {Estoril, Portugal},
key = {ESSDERC 2003},
pages = {457-460},
year = 2003,
month = sep,
isbn = {0-7803-7999-3},
publisher = {IEEE},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1256912&isnumber=28111&punumber=8890&k2dockey=1256912@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=14},
pdf = {http://ieeexplore.ieee.org/iel5/8890/28111/01256912.pdf?tp=&isnumber=28111&arnumber=1256912&punumber=8890},
doi = {10.1109/ESSDERC.2003.1256912},
abstract = {The error of the numeric approximation of the semiconductor
device equations particularly depends on the grid
used for the discretization. Since the most
interesting regions of the device are generally
straightforward to identify, the method of choice is
to use structurally aligned grids. Here we present
an algorithm for generating structurally aligned
grids including anisotropy and for producing grids
whose resolution varies over several orders of
magnitude. Furthermore the areas with increased
resolution and the corresponding resolutions can be
defined in a flexible manner and criteria on grid
quality can be enforced.
The grid generation
algorithm was applied to sample structures which
highlight the features of this method. Furthermore
we generated grids for the simulation of a high
voltage trench gate MOSFET. In order to resolve the
junction regions accurately, four regions were
defined where the grid was grown in several
directions with varying resolutions. Finally device
simulations performed by MINIMOS NT show current
voltage characteristics and the threshold voltage.}
}
@inproceedings{Wessner2003error,
author = {Wilfried Wessner AND Clemens Heitzinger AND Andreas Hössinger AND Siegfried Selberherr},
title = {Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2003)},
address = {Boston, MA, USA},
key = {SISPAD 2003},
pages = {109-112},
year = 2003,
month = sep,
isbn = {0-7803-7826-1},
publisher = {IEEE},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1233649&isnumber=27642&punumber=8729&k2dockey=1233649@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=17},
pdf = {http://ieeexplore.ieee.org/iel5/8729/27642/01233649.pdf?tp=&isnumber=27642&arnumber=1233649&punumber=8729},
abstract = {We present a computational method for locally adapted
conformal anisotropic tetrahedral mesh
refinement. The element size is determined by an
anisotropy function which is governed by an error
estimation driven ruler according to an adjustable
maximum error. Anisotropic structures are taken into
account to reduce the amount of elements compared to
strict isotropic refinement. The spatial resolution
in three-dimensional unstructured tetrahedral meshes
for diffusion simulation can be dynamically
increased.}
}
@inproceedings{Heitzinger2003algorithm,
author = {Clemens Heitzinger AND Andreas Hössinger AND Siegfried Selberherr},
title = {An Algorithm for Smoothing Three-Dimensional {Monte Carlo} Ion Implantation Simulation Results},
booktitle = {Proc. 4th IMACS Symposium on Mathematical Modelling (MathMod 2003)},
editor = {I. Troch AND F. Breitenecker},
address = {Vienna, Austria},
key = {MathMod 2003},
pages = {702-711},
year = 2003,
month = feb,
isbn = {3-901608-24-9},
pdf = {Papers/heitzinger2003algorithm.pdf},
abstract = {We present an algorithm for smoothing results of
three-dimensional Monte Carlo ion implantation
simulations and translating them from the grid used
for the Monte Carlo simulation to an arbitrary
unstructured three-dimensional grid. This algorithm
is important for joining various simulations of
semiconductor manufacturing process steps, where
data have to be smoothed or transferred from one
grid to another. Furthermore different grids must be
used since using ortho-grids is mandatory because of
performance reasons for certain Monte Carlo
simulation methods. The algorithm is based on
approximations by generalized Bernstein
polynomials. This approach was put on a
mathematically sound basis by proving several
properties of these polynomials. It does not suffer
from the ill effects of least squares fits of
polynomials of fixed degree as known from the
popular response surface method. The smoothing
algorithm which works very fast is described and in
order to show its applicability, the results of
smoothing a three-dimensional real world
implantation example are given and compared with
those of a least squares fit of a multivariate
polynomial of degree two, which yielded unusable
results.}
}
@inproceedings{Heitzinger2002increasing,
author = {Clemens Heitzinger AND Josef Fugger AND Oliver Häberlen AND Siegfried Selberherr},
title = {On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method},
booktitle = {Proc. 32th European Solid-State Device Research Conference (ESSDERC 2002)},
editor = {G. Baccarani AND E. Gnani AND M. Rudan},
address = {Florence, Italy},
key = {ESSDERC 2002},
pages = {347-350},
year = 2002,
month = sep,
isbn = {88-900847-8-2},
publisher = {University of Bologna},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1503870&isnumber=32254&punumber=10060&k2dockey=1503870@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=10},
pdf = {http://ieeexplore.ieee.org/iel5/10060/32254/01503870.pdf?tp=&isnumber=32254&arnumber=1503870&punumber=10060},
abstract = {Deposition and etching in Silicon trenches is an important
step of today’s semiconductor
manufacturing. Understanding the surface evolution
enables to predict the resulting profiles and thus
to optimize process parameters. Simulations using
the radiosity modeling approach and the level set
method provide accurate results, but their speed has
to be considered when employing advanced models and
for purposes of inverse modeling.
In this paper
strategies for increasing the accuracy of deposition
simulations while decreasing simulation times are
presented. Two algorithms were devised: first,
intertwining narrow banding and extending the speed
function yields a fast and accurate level set
algorithm. Second, an algorithm which coarsens the
surface reduces the computational demands of the
radiosity method.
Finally measurements of a typical
TEOS deposition process are compared with
simulation results both with and without coarsening
of the surface elements. It was found that the
computational effort is significantly reduced
without sacrificing the accuracy of the
simulations.}
}
@inproceedings{Heitzinger2002simulation,
author = {Clemens Heitzinger AND Josef Fugger AND Oliver Häberlen AND Siegfried Selberherr},
title = {Simulation and Inverse Modeling of {TEOS} Deposition Processes Using a Fast Level Set Method},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2002)},
address = {Kobe, Japan},
key = {SISPAD 2002},
pages = {191-194},
year = 2002,
month = sep,
isbn = {4-89114-027-5},
publisher = {Business Center for Academic Societies, Japan},
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1034549&isnumber=22206&punumber=8038&k2dockey=1034549@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=18},
pdf = {http://ieeexplore.ieee.org/iel5/8038/22206/01034549.pdf?tp=&isnumber=22206&arnumber=1034549&punumber=8038},
doi = {10.1109/SISPAD.2002.1034549},
abstract = {Deposition and etching of silicon trenches is an important
manufacturing step for state of the art memory
cells. Understanding and simulating the transport of
gas species and surface evolution enables to achieve
void-less filling of deep trenches, to predict the
resulting profiles, and thus to optimize process
parameters with respect to manufacturing throughput
and the quality of the resulting memory cells. For
the simulation of the SiO$_2$ deposition process
from TEOS (Tetraethoxysilane), the level set method
was used in addition to physical models. The level
set algorithm devised minimizes computational effort
while ensuring high accuracy by intertwining narrow
banding and extending the speed function. In order
to make the predictions of the simulation more
accurate, model parameters were extracted by
comparing the step coverages of the deposited layers
in the simulation with those of SEM (scanning
electron microscope) images.}
}
@inproceedings{Heitzinger2002calibrated,
author = {Clemens Heitzinger AND Siegfried Selberherr},
title = {A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution},
booktitle = {Proc. 23rd IEEE International Conference on Microelectronics (MIEL 2002)},
address = {Niš, Yugoslavia},
key = {MIEL 2002},
pages = {431-434},
year = 2002,
month = may,
url = {http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=1003291&isnumber=21637&punumber=7858&k2dockey=1003291@ieeecnfs&query=%28%28heitzinger%29%3Cin%3Emetadata%29&pos=19},
pdf = {http://ieeexplore.ieee.org/iel5/7858/21637/01003291.pdf?tp=&isnumber=21637&arnumber=1003291&punumber=7858},
doi = {10.1109/MIEL.2002.1003291},
abstract = {The formation and dissolution of silicon self-interstitial
clusters is linked to the phenomenon of TED
(transient enhanced diffusion) which in turn has
gained importance in the manufacturing of
semiconductor devices. Based on theoretical
considerations and measurements of the number of
self-interstitial clusters during a thermal step we
were interested in finding a suitable model for the
formation and dissolution of self-interstitial
clusters and extracting corresponding model
parameters for two different technologies (i.e.,
material parameter sets). In order to automate the
inverse modeling part a general optimization
framework was used. Additional to solving this
problem the same setup can solve a wide range of
inverse modeling problems occurring in the domain of
process simulation. Finally the results are
discussed and compared with a previous model.}
}
@inproceedings{Grasser2002impact,
author = {Tibor Grasser AND Hans Kosina AND Clemens Heitzinger AND Siegfried Selberherr},
title = {An Impact Ionization Model Including an Explicit Cold Carrier Population},
booktitle = {Proc. 5th International Conference on Modeling and Simulation of Microsystems (MSM 2002)},
address = {San Juan, Puerto Rico, USA},
key = {MSM 2002},
pages = {572-575},
year = 2002,
month = apr,
url = {http://www.nsti.org/procs/MSM2002/11/X21.08},
pdf = {http://www.nsti.org/publ/MSM2002/225.pdf},
abstract = {Conventional macroscopic impact ionization models which use
the average carrier energy as main parameter cannot
accurately describe the phenomenon in modern
miniaturized devices. Here we present a new model
which is based on an analytic expression for the
distribution function. In particular, the
distribution function model accounts explicitly for
a hot and a cold carrier population in the drain
region of MOS transistors. The parameters are
determined by three even moments obtained from a
solution of a six moments transport model. Together
with a nonparabolic description of the density of
states accurate closed form macroscopic impact
ionization models can be derived based on familiar
microscopic descriptions.}
}
@inproceedings{Heitzinger2001optimization,
author = {Clemens Heitzinger AND Siegfried Selberherr},
title = {Optimization for {TCAD} Purposes Using {Bernstein} Polynomials},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001)},
editor = {D. Tsoukalas AND C. Tsamis},
address = {Athens, Greece},
key = {SISPAD 2001},
pages = {420-423},
year = 2001,
month = sep,
isbn = {3-211-83708-6},
publisher = {Springer, Wien, New York},
pdf = {Papers/heitzinger2001optimization.pdf},
abstract = {The optimization of computationally expensive objective
functions requires approximations that preserve the
global properties of the function under
investigation. The RSM approach of using
multivariate polynomials of degree two can only
preserve the local properties of a given function
and is therefore not well-suited for global
optimization tasks. In this paper we discuss
generalized Bernstein polynomials that provide
faithful approximations by converging uniformly to
the given function. Apart from being useful for
optimization tasks, they can also be used for
solving design for manufacturability problems.}
}
@inproceedings{Gehring2001TCAD,
author = {Andreas Gehring AND Clemens Heitzinger AND Tibor Grasser AND Siegfried Selberherr},
title = {{TCAD} Analysis of Gain Cell Retention Time for {SRAM} Applications},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001)},
editor = {D. Tsoukalas AND C. Tsamis},
address = {Athens, Greece},
key = {SISPAD 2001},
pages = {416-419},
year = 2001,
month = sep,
isbn = {3-211-83708-6},
publisher = {Springer, Wien, New York},
pdf = {Papers/gehring2001tcad.pdf},
abstract = {We present simulations of a recently published SRAM memory
gain cell consisting of two transistors and one MOS
capacitor, representing an alternative to
conventional six transistor SRAMs. Inverse modeling
is used to fit a given device characteristic to
measurement data. To account for de-charging due to
tunneling, we use a simple, non-local tunneling
model and calibrate it with data from literature. By
optimization, we find values for the contact
voltages in the off-region at which the retention
time is a maximum.}
}
@inproceedings{Pyka2001monitoring,
author = {Wolfgang Pyka AND Clemens Heitzinger AND Naoki Tamaoki AND Toshiro Takase AND Toshimitsu Ohmine AND Siegfried Selberherr},
title = {Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon {CVD}},
booktitle = {Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001)},
editor = {D. Tsoukalas AND C. Tsamis},
address = {Athens, Greece},
key = {SISPAD 2001},
pages = {124-127},
year = 2001,
month = sep,
isbn = {3-211-83708-6},
publisher = {Springer, Wien, New York},
pdf = {Papers/pyka2001monitoring.pdf},
abstract = {Experiments of As-doped poly-silicon deposition have shown
that under certain process conditions step coverages
> 1 can be achieved. We have developed a new model
for the simulation of As-doped poly-silicon
deposition, which takes into account surface
coverage dependent sticking coefficients and surface
coverage dependent As incorporation and desorption
rates. The additional introduction of Langmuir type
time-dependent surface coverage enabled the
reproduction of the bottom-up filling of the
trenches. In addition the rigorous treatment of the
time-dependent surface coverage allows to trace the
in-situ doping of the deposited film. Simulation
results are shown for poly-Si deposition into
0.1$\mu$m wide and 7$\mu$m deep, high aspect ratio
trenches.}
}
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